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Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « Mots-clés originaux en anglais » - tête de navigation
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Index : Keywords

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Les termes de plus forte occurence

32857Experimental study
12709Semiconductor materials
11125Gallium arsenides
10692III-V semiconductors
8843Indium arsenides
8569Photoluminescence
7634Inorganic compound
7625Indium compounds
5960Ternary compounds
5655Indium Phosphides
5358Theoretical study
5164Binary compounds
5060Thin films
4680Indium
4565Indium phosphides
4231Thin film
4161Molecular beam epitaxy
4067Gallium Arsenides
3907XRD
3687III-V compound
3499Gallium Indium Arsenides Mixed
3272Electrical conductivity
2952Indium oxide
2852Doping
2813Chemical composition
2757Epitaxy
2747Semiconductor lasers
2680Energy gap
2530Quantum wells
2524Optical properties
2483Crystal growth
2406Quantum dots
2402Indium Arsenides
2387Temperature dependence
2292Crystal growth from vapors
2281Ternary compound
2253Solar cell
2250Gallium compounds
2238Scanning electron microscopy
2101X ray diffraction
2092Binary compound
2084Silicon
2064Annealing
1993Nanostructured materials
1982Band structure
1978Experiments
1973Atomic force microscopy
1949Quaternary compounds
1918Temperature
1912Growth mechanism
1907Aluminium arsenides
1893Semiconductor quantum wells
1892Transmission electron microscopy
1887Multiple quantum well
1881Heterojunction
1878Indium selenides
1872Gallium phosphides
1822Microstructure
1778Voltage current curve
1750Thickness
1748Doped materials
1699Morphology
1690Electrical properties
1664Electronic structure
1631Heterostructures
1598Surface structure
1597Epitaxial layers
1584Semiconductor quantum dots
1583Hall effect
1577Microelectronic fabrication
1575Crystal structure
1570Indium nitrides
1559Tin oxide
1543Indium phosphide
1532Theory
1489Carrier density
1485Semiconductor laser
1457Low temperature
1430Performance evaluation
1395Gallium Indium Arsenides phosphides Mixed
1387Copper selenides
1383Aluminium compounds
1379Heterojunctions
1368Excitons
1358Human
1355Indium oxides
1339Quantum well
1335Gallium nitrides
1334Inorganic compounds
1333Electroluminescence
1331Preparation
1310MOCVD
1310Indium antimonides
1278VPE
1276Indium alloys
1270Characterization
1250MOVPE method
1241Impurity
1232Light emitting diode
1231Indium additions
1218Photoconductivity
1217Semiconductor growth
1217Absorption spectra
1208Current density
1198Semiconducting indium compounds
1191Quantum well lasers
1156Indium Antimonides
1130Gallium nitride
1104Indium nitride
1091Charge carrier concentration
1058Diffusion
1052Nanostructures
1025Electrical characteristic
1013Lattice parameters
1013Electrodes
1005Light emitting diodes
990Semiconducting indium phosphide
971Mismatch lattice
966Semiconductor epitaxial layers
966Chemical vapor deposition
948Performance
941Temperature effects
935Solid solution
928Transition metal Compounds
919Organometallic compound
918Substrates
916Strained quantum well
915Monocrystals
908Gold
895Kinetics
895Ion implantation
894Zinc oxide
891Buffer layer
887TEM
878Infrared spectra
873Single crystal
873Glass
871Thermal annealing
867Radionuclide study
867IV characteristic
855Oxidation
853Scintigraphy
850Solar cells
838Carrier mobility
824Gallium selenides
817Roughness
811Gallium antimonides
807Indium Oxides
805Comparative study
803Copper
799Field effect transistor
791Wide band gap semiconductors
789Activation energy
786Interface states
781Optoelectronic device
780Impurity density
780Heterojunction bipolar transistors
779Optimization
779Gallium
776Superlattices
771Molecular beam condensation
769Quaternary compound
767CVD
766X-ray photoelectron spectra
765Infrared radiation
758Quantum yield
753Magnetic field effects
751Tin addition
750Electrochemical reaction
748Laser diodes
747Optical absorption
743Radiolabelling
737Modified material
732Tunnel effect
724Multilayers
724Indium tin oxide electrode
721High electron mobility transistor
718Effective mass
713Charge carrier mobility
709Solid solutions
705Injection laser
697Tin oxides
696Aluminium Gallium Arsenides Mixed
687Raman spectra
685Application
683Manufacturing
680High temperature
671Precursor
671Fermi level
661Electrodeposition
656Zinc
655Organic ligand
650Growth from vapor
649Aluminium Indium Arsenides Mixed
648Passivation
646Refractive index
644Semiconducting gallium arsenide
644Photodetectors
643Tin
639Aluminium
633Nanowires
632Interface structure
626Threshold current
622Interfaces
611Measuring methods
604Superlattice
604Output power
599Photodiode
598Spectral line shift
597Heterojunction transistor
595Semiconductor heterojunctions
587Semiconducting indium gallium arsenide
585Strains
584Heteroepitaxy
583Crystalline structure
581Integrated optics
576Electron mobility
574Silver
574Etching
573Self-assembly
571Polycrystals
570ITO layers
565Gallium Phosphides
564Optical transition
563Semiconductor doping
560High electron mobility transistors
556Chalcopyrite
555Optical waveguides
553Density functional method
547Electric conductivity
545Photodetector
541Cyclic voltammetry
540Time resolved spectra
535Charge carrier trapping
532Size effect
532Aluminium Arsenides
527Cathodoluminescence
524Germanium
524Exciton
521Ambient temperature
517Indium sulfides
517Defect states
512Surface treatments
512Sputtering
511Temperature effect
509Operating mode
508Indium Selenides
508Heat treatments
508Gallium Indium Phosphides Mixed
506Thiophene derivative polymer
506Line widths
506II-VI semiconductors
504Phase transformations
504Lifetime
503Nanocrystal
502Aqueous solution
499Amorphous state
498Gallium phosphide
497Stress relaxation
495Transmittance
494Illumination
491Donor center
489Reflectivity
489Manufacturing process
489Anisotropy
488Thermal stability
488Film growth
487Transparent material
482Island structure
481RHEED
481Iron
480Pressure effects
479Organic light emitting diodes
479Copper Indium Selenides Mixed
478Electronic properties
476Electric field effects
474Valence bands
472Adsorption
470Quantity ratio
469Crystal orientation
468Magnetic field
467Stoichiometry
466Semiconductor thin films
466Reliability
466Photovoltaic cell
465Magnetoresistance
464Surface treatment
464N type conductivity
463Surfaces
461Surface reconstruction
460Luminescence
459Crystal defects
459Conduction bands
458Semiconductor device manufacture
458Self-assembled layers
454Tin Oxides
454Phosphorus compounds
454Conducting polymers
454Capacitance
451Thermodynamic properties
445STM
444Vacancies
441Room temperature
440Infrared detectors
438Visible radiation
438Sputter deposition
438Solid-solid interfaces
436Magnetic susceptibility
435Semiconductor superlattices
435Polycrystal
435Impurities
435Digital simulation
434Gain
434Fabrication
433Ternary alloys
430Hydrogen
429Irradiation
426Phase diagrams
425Barrier height
424Optical materials
424Interface
423Monoclonal antibody
422Modeling
422Magnetization
422Composition effect
421Charge carrier recombination
420Acceptor center
419Heat treatment
419Diagnosis
419Aluminium nitrides
418Secondary ion mass spectrometry
417Optoelectronic devices
417Cadmium tellurides
414Nanoparticle
414Crystallization
413Nonlinear optics
412Visible spectra
412Semiconducting aluminum compounds
411Electrochemical properties
410Solid solid interface
410Animal
409Photodiodes
408Electron diffraction
406Organic compounds
404Crystal growth from melts
402Support
401Energy-level transitions
399Surface states
399Molecular structure
399Evaporation
398Strained layer
398Photoelectron spectrometry
397Chemical analysis
396Rapid thermal annealing
394Optical characteristic
394Dislocation density
393Low pressure
393Coatings
393Chemical etching
393Cerium alloys
392Epitaxial film
392Binding energy
391Infrared absorption
391Ground states
389Photoelectron spectroscopy
386Monolithic integrated circuit
384X ray
384Nanomaterial synthesis
383Carbon
382Transconductance
382Reflection spectrum
382Localized states
379Crystal growth from solutions
377Surface morphology
377Reviews
377Platinum
376Impurity states
376Electrochromism
375Ultraviolet radiation
375Semiconductor device structures
375Oxygen
375Dislocations
373Absorption coefficients
372Nanoparticles
371Surface
370Indium sulfide
370Hall mobility
370Confinement
368Optical pumping
366Voltage capacity curve
366Electronic density of states
365Growth rate
365Band offset
364Aluminium antimonides
363SEM
363Permittivity
362Antimony
361Layer thickness
360Ab initio calculations
359Radiofrequency sputtering
358Multiple layer
358Deep level
357Segregation
355Tin Indium Oxides Mixed
355Experimental result
354Silicon oxides
349Photoelectric current
348Transport processes
348Time resolution
346Interband transitions
345Optical telecommunication
345Electric field
345Chemical synthesis
342Integrated circuit
341Double heterojunction
339Two-dimensional electron gas
339Physical vapor deposition
338Grain size
337Excited states
336Copper compounds
335Chemical reduction
334Polarization
334Organic solar cells
334Catalytic reaction
333P type conductivity
333Carrier lifetime
332Cathode sputtering
331Reaction mechanism
331Dislocation
330Semiconductor device
330Electric currents
329Performance characteristic
329Optical waveguide
328Instrumentation
326Integrated optoelectronics
325Mechanical properties
325Concentration distribution
324Excitation spectrum
324Bandwidth
323Transition element compounds
323Fabrication property relation
323Density of states
322Raman scattering
321Tin additions
320Binary alloys
318LPE
318Interdiffusion
316Thin film transistor
315Surface topography
315Quantum wires
315Ohmic contacts
315Active layer
314Vertical cavity laser
314Optoelectronics
314In situ
313Surface emitting lasers
313Reactive ion etching
313Phase diagram
313CV characteristic
312Sheet resistivity
312Dielectric function
311Diode
310Solar energy
310Charge carriers
307Synchrotron radiation
305Intermetallic compounds
305Electric resistivity
302Optical transmission
302Leukocyte
302Field effect transistors
302Energy levels
302Crystallinity
302Contact resistance
301Refraction index
301Dispersive spectrometry
297Subband
297Nitrogen heterocycle
296Measurement method
296Conversion rate
292Mirrors
292Gallium Antimonides
291Electron gas
291Czochralski method
290Cubic lattices
289Self assembly
289Electron density
287Quantum efficiency
287Electron-hole recombination
287DLTS
287Cadmium
285High field
284Ultraviolet visible spectrometry
284Titanium oxide
284Distributed feedback lasers
283Schottky barrier
283Radiation detectors
283Preferred orientation
283Polymer
283Nucleation
283Absorption edge

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