RFID tag < RHEED < RHEED diffraction

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 481.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000454 (2013)		Study of the pseudo-(1 x 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE
000479 (2013)		Structural and nanomechanical properties of InN films grown on Si(100) by femtosecond pulsed laser deposition
000603 (2013)		Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrate
000918 (2013)		Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxy
000A64 (2013)		Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers
000C40 (2013)		Growth and stuctural characterization of InGaN layers with controlled In content prepared by plasma-assisted molecular beam epitaxy
000C44 (2013)		Growth and Characterization of InxGa1-xN Multiple Quantum Wells Without Phase Separation
000E32 (2013)		Effects of growth conditions on the formation of self-assembled InAs quantum dots grown on (1 1 5)A GaAs substrate
000F26 (2013)		Double-Pulsed Growth of InN by RF-MBE
001128 (2013)		As flux dependence on RHEED transients during InAs quantum dot growth
001221 (2013)		A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy
001363 (2012)		The physical origin of the InSb(111)A surface reconstruction transient
001770 (2012)		Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy : Indium Nitride and Related Alloys
001B34 (2012)		Growth conditions effects on optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs (1 1 3)A substrate
001F65 (2012)		Cation-anion mixed-dimer structure of Al-induced (2 x 4) reconstruction on InAs(001)
002509 (2011)		Strain accumulation in InAs/InxGa1-xAs quantum dots
002C11 (2011)		InP ring-shaped quantum-dot molecules grown by droplet molecular beam epitaxy
002D33 (2011)		High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy
002E01 (2011)		Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization
002E24 (2011)		Growth and characterization of InGaN by RF-MBE
002E53 (2011)		Ga and In incorporation rates in Ga1-xInxAs growth by chemical beam epitaxy

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