Serveur d'exploration sur l'Indium - Repository (Accueil)

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Indium compound < Indium compounds < Indium devices  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7625.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000149 (2014) Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices
000250 (2013) Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors
000251 (2013) Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000270 (2013) Type-II InAs/GaSb superlattice grown on InP substrate
000316 (2013) Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
000342 (2013) The new barium mercuride BaHg6 and ternary indium and gallium derivatives
000376 (2013) Temperature dependent lattice constant of InSb above room temperature
000568 (2013) Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhanced epitaxy
000627 (2013) RF-MBE growth of cubic InN nano-scale dots on cubic GaN
000796 (2013) Optical and structural studies of InN/GaN dots with varying GaN cap thickness
000998 (2013) Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
000C21 (2013) Growth of thick InGaN films with entire alloy composition using droplet elimination by radical-beam irradiation
000C24 (2013) Growth of optical-quality, uniform In-rich InGaN films using two-heater metal-organic chemical vapor deposition
000C28 (2013) Growth of heterostructures on InAs for high mobility device applications
000C29 (2013) Growth of corundum-structured In2O3 thin films on sapphire substrates with Fe2O3 buffer layers
000D11 (2013) Fabrication of InAs nanoscale rings by droplet epitaxy
000E22 (2013) Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(1013) crystal on GaAs(110) by MOVPE
000F63 (2013) Defect reduction in (11-22) semipolar GaN with embedded InN islands on m-plane sapphire
000F95 (2013) Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface
001026 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
001231 (2013) A Chiral Tetrahedral Framework with Tetrahedral Guests for Catalysis and Photoluminescence

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