III-V compound < III-V semiconductors < III-VI compound

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List of bibliographic references

Number of relevant bibliographic references: 10692.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000006 (2014)		Two-Color Single-Photon Emission from InAs Quantum Dots: Toward Logic Information Management Using Quantum Light
000008 (2014)		Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics
000010 (2014)		Time resolved emission at 1.3 μm of a single InAs quantum dot by using a tunable fibre Bragg grating
000024 (2014)		Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays
000039 (2014)		Structural and optical properties of InxGa1-xAs strained layers grown on GaAs substrates by MOVPE
000074 (2014)		Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates
000076 (2014)		Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates
000088 (2014)		Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000107 (2014)		III-V nanowire arrays: growth and light interaction
000142 (2014)		Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
000143 (2014)		Electrical and optical properties of transparent conducting InxGa1-xN alloy films deposited by reactive co-sputtering of GaAs and indium
000149 (2014)		Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices
000150 (2014)		Effects of ferromagnetic nanopillars on spin coherence in an InGaAs quantum well
000161 (2014)		Directions and Breakup of Self-Running In Droplets on Low-Index InP Surfaces
000177 (2014)		Compact low driving voltage (<400 mVpp) electro-absorption modulator laterally integrated with VCSEL
000186 (2014)		Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition
000223 (2013)		Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization
000226 (2013)		Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layers
000229 (2013)		Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation
000246 (2013)		Unraveling the Impurity Location and Binding in Heavily Doped Semiconductor Nanocrystals: The Case of Cu in InAs Nanocrystals
000250 (2013)		Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

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