Strained heterojunction < Strained layer < Strained layer heteroepitaxy

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List of bibliographic references

Number of relevant bibliographic references: 398.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000039 (2014)		Structural and optical properties of InxGa1-xAs strained layers grown on GaAs substrates by MOVPE
000570 (2013)		Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal
000648 (2013)		Properties of electrodeposited Fe-Cu films grown on ITO coated glass substrates at different electrolyte temperatures
000695 (2013)		Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers
000782 (2013)		Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature
000963 (2013)		Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
000B80 (2013)		Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
000C45 (2013)		Growth and Characterization of InxGa1-xAs/GaAs1-yPy Strained-Layer Superlattices with High Values of y (∼80%)
000C53 (2013)		Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots
001020 (2013)		Conduction- and Valence-Band Energies in Bulk InAs1-xSbx and Type II InAs1-xSbx/InAs Strained-Layer Superlattices
001118 (2013)		Band parameters of InGaAs/GaAs quantum dots: electronic properties study
001B40 (2012)		Growth Studies on Quaternary AlInGaN Layers for HEMT Application
001B41 (2012)		Grazing Incidence X-Ray Diffraction Measurements of InAs/GaAs Quantum Dots Using Equipment Available for Laboratories
001C27 (2012)		Exciton optical absorption coefficients and refractive index changes in a strained InAs/GaAs quantum wire: The effect of the magnetic field
002041 (2012)		An attempt to design long-wavelength (>2 μm) InP-based GaInNAs diode lasers
002165 (2011)		Varshni parameters for InAs/GaSb strained layer superlattice infrared photodetectors
002250 (2011)		Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised Zr02 (111) : SEMICONDUCTING OXIDES
002355 (2011)		Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
002492 (2011)		Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature
002505 (2011)		Stranski-Krastanov transition and self-organized structures in low-strained AIInN/GaN multilayer structures
002506 (2011)		Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations

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