LOCA < LPE < LPG

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 318.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000251 (2013)		Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000289 (2013)		Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi
000388 (2013)		TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000574 (2013)		Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers
000790 (2013)		Optical characterization of Zn-doped In0.14Ga0.86As0.13Sb0.87 layers grown by liquid phase epitaxy
000D71 (2013)		Electronic properties of a single heterojunction in InSb/InAs quantum dot system
001351 (2012)		Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs
001512 (2012)		Structural and electrical characteristics of InGaAsN layers grown by LPE
001631 (2012)		Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb
001673 (2012)		Polycrystalline silicon films on glass grown by amorphous-liquid-crystalline transition at temperatures below 330 °C
001A61 (2012)		Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction
001B33 (2012)		Growth kinetics on silicon facets during low-temperature crystallization from indium solution
002213 (2011)		Transport of nitrogen atoms during liquid phase epitaxial growth of InAsN and GaAsN
002514 (2011)		Status of p-on-n Arsenic-Implanted HgCdTe Technologies
002660 (2011)		Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
002958 (2011)		N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy
002A33 (2011)		MCT IR detectors in France
003608 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
003832 (2010)		Study of temperature and indium concentration-dependent dielectric constant and electron affinity effects on the exciton optical transition and binding energy in spherical GaSb-Ga1-xInxAsySb1-y-GaSb quantum dots
003C57 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
004460 (2010)		Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique

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