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Index « AffRegion.i » - entrée « Wisconsin »
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Vénétie < Wisconsin < Wyoming  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 65.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
003043 (2011) Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices
004051 (2010) Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO2/Si
00BD45 (2003-12-15) Examination of liquid metal surfaces through angular and energy measurements of inert gas collisions with liquid Ga, In, and Bi
00BF52 (2003-09-29) Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers
00BF74 (2003-09-15) Experimental evidence of carrier leakage in InGaAsN quantum-well lasers
00BF93 (2003-09-08) Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates
00C191 (2003-07-07) High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy
00C292 (2003-06-09) Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm
00C391 (2003-05-12) X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN
00C404 (2003-05-05) Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing
00C575 (2003-03-10) The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
00DE26 (2002-09-30) Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
00E212 (2002-05-15) Arsenic adsorption and exchange with phosphorus on indium phosphide (001)
00E446 (2002-03-01) Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy
00FF22 (2001-08-01) In-plane upper critical field anisotropy in Sr2RuO4 and CeIrIn5
010034 (2001-06-25) Surface-emitting, single-lobe operation from second-order distributed-reflector lasers with central grating phaseshift
010167 (2001-05-15) Comment on Photoemission experiments on YbInCu4: Surface effects and temperature dependence
010302 (2001-04-09) Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding
011992 (2000-12-15) Bulk electronic structure of YbInCu4 from photoemission: A unique test of the single impurity model
011A56 (2000-11-22) Argon scattering from liquid indium: Simulations with embedded atom potentials and experiment
011E83 (2000-07) Resonant ultrasound spectroscopy for measurement of mechanical damping: Comparison with broadband viscoelastic spectroscopy

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