AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Vénétie »
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List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
001A81 (2012) High-pressure behavior of NaInSi2O6 and the influence of Me3+ on the compressibility of NaMe3+Si2O6 silicates
00A892 (2004-01-01) Structural characterization and modeling of damage accumulation in In implanted Si
00AA40 (2004) Thermal behavior of indium nanoclusters in ion-implanted silica
00AB39 (2004) Synthesis and stability of indium nanoclusters formed in silica by ion implantation
00BD76 (2003-12-01) Atomic environment of Fe following high-temperature implantation in InP
00E992 (2002) Strain effect on interatomic distances in InGaAs/InP epitaxial layers
010E02 (2001) Mid-infrared (3.5 μm) electroluminescence from heavily Fe2+ ion-implanted semi-insulating InP
010E29 (2001) Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs
011197 (2001) High Fe2+/3+ trap concentration in heavily compensated implanted InP
011571 (2001) Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe
011647 (2001) Composition and microstructure of cobalt oxide thin films obtained from a novel cobalt(II) precursor by chemical vapor deposition
011761 (2001) Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP
013226 (2000) Factors limiting the maximum operating voltage of microwave devices
013708 (2000) Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence
013D18 (1999-08-02) High-resistance buried layers by MeV Fe implantation in n-type InP
013E86 (1999-06-15) Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers
014513 (1999-01-15) Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP
016D48 (1998) Lattice-matched Zn1-yCdySe/InxGa1-xAs(0 0 1) heterostructures
018784 (1997) Positive temperature dependence of the electron impact ionization coefficient in In0.53Ga0.47As/InP HBT's
019533 (1997) A study of hot-electron degradation effects in pseudomorphic HEMTs
01BC65 (1995-02-27) Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors

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