Ident. | Authors (with country if any) | Title |
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003043 (2011) |
| Electrical properties of stacking electrodes for flexible crystalline semiconductor photonic devices |
004051 (2010) |
| Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO2/Si |
00BD45 (2003-12-15) |
| Examination of liquid metal surfaces through angular and energy measurements of inert gas collisions with liquid Ga, In, and Bi |
00BF52 (2003-09-29) |
| Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers |
00BF74 (2003-09-15) |
| Experimental evidence of carrier leakage in InGaAsN quantum-well lasers |
00BF93 (2003-09-08) |
| Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates |
00C191 (2003-07-07) |
| High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy |
00C292 (2003-06-09) |
| Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm |
00C391 (2003-05-12) |
| X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN |
00C404 (2003-05-05) |
| Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing |
00C575 (2003-03-10) |
| The role of hole leakage in 1300-nm InGaAsN quantum-well lasers |
00DE26 (2002-09-30) |
| Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers |
00E212 (2002-05-15) |
| Arsenic adsorption and exchange with phosphorus on indium phosphide (001) |
00E446 (2002-03-01) |
| Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy |
00FF22 (2001-08-01) |
| In-plane upper critical field anisotropy in Sr2RuO4 and CeIrIn5 |
010034 (2001-06-25) |
| Surface-emitting, single-lobe operation from second-order distributed-reflector lasers with central grating phaseshift |
010167 (2001-05-15) |
| Comment on Photoemission experiments on YbInCu4: Surface effects and temperature dependence |
010302 (2001-04-09) |
| Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding |
011992 (2000-12-15) |
| Bulk electronic structure of YbInCu4 from photoemission: A unique test of the single impurity model |
011A56 (2000-11-22) |
| Argon scattering from liquid indium: Simulations with embedded atom potentials and experiment |
011E83 (2000-07) |
| Resonant ultrasound spectroscopy for measurement of mechanical damping: Comparison with broadband viscoelastic spectroscopy |
012057 (2000-05-01) |
| Experimental test for elastic compliance during growth on glass-bonded compliant substrates |
012164 (2000-04-15) |
| Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen |
012165 (2000-04-15) |
| CuInSe2 phase formation during Cu2Se/In2Se3 interdiffusion reaction |
012295 (2000-03-06) |
| 1.6 W continuous-wave coherent power from large-index-step (Δn≃0.1) near-resonant, antiguided diode laser arrays |
012396 (2000-02-01) |
| Viscoelastic behavior of 80In15Pb5Ag and 50Sn50Pb alloys: Experiment and modeling |
013B01 (1999-10-04) |
| Localization of Na impurities at the buried CdS/Cu(In,Ga)Se2 heterojunction |
013B99 (1999-09-13) |
| InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality |
013C69 (1999-08-16) |
| Single-mode, single-lobe operation of surface-emitting, second-order distributed feedback lasers |
013F68 (1999-05-24) |
| Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers |
014071 (1999-04-26) |
| The electrical behavior of Pt3In7 and NiIn contacts to p-GaN |
014232 (1999-03-08) |
| Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction |
014285 (1999-03) |
| The kinetics of indium/amorphous-selenium multilayer thin film reactions |
015B10 (1998-10-12) |
| 1.1 W continuous-wave, narrow spectral width (<1 Å) emission from broad-stripe, distributed-feedback diode lasers (λ=0.893 μm) |
015C37 (1998-08-31) |
| High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers |
015C96 (1998-08-03) |
| 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating |
016091 (1998-04) |
| Thermodynamically stable tungsten ohmic contacts to n-In0.53Ga0.47As |
016309 (1998-02-09) |
| 730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells |
016371 (1998-01-12) |
| High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays |
016379 (1998-01-05) |
| 6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers |
017A61 (1997-09-01) |
| 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers |
017C11 (1997-07-14) |
| 5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers |
017C37 (1997-07) |
| X-ray photoemission analysis of chemically treated I-III-VI semiconductor surfaces |
017D76 (1997-05-26) |
| High peak-current-density strained-layer In0.3Ga0.7As/Al0.8Ga0.2As resonant tunneling diodes grown by metal-organic chemical vapor deposition |
017D84 (1997-05-20) |
| Search for physics beyond the standard model via a polarization-asymmetry correlation experiment on 107In |
018158 (1997-01-13) |
| High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers |
018164 (1997-01-06) |
| Ohmic contacts to n-GaN using PtIn2 |
018174 (1997-01-01) |
| Thermally stable PdIn ohmic contacts to n-GaAs via exchange mechanism |
019680 (1996-12-02) |
| PdIn contacts to n-type and p-type GaP |
019725 (1996-11-15) |
| Study of relaxed InxGa1-xAs epilayers on GaAs by grazing incidence x-ray diffraction |
019926 (1996-09-09) |
| 8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers |