Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Wisconsin »
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Vénétie < Wisconsin < Wyoming  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 65.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
011E83 (2000-07) Resonant ultrasound spectroscopy for measurement of mechanical damping: Comparison with broadband viscoelastic spectroscopy
012057 (2000-05-01) Experimental test for elastic compliance during growth on glass-bonded compliant substrates
012164 (2000-04-15) Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen
012165 (2000-04-15) CuInSe2 phase formation during Cu2Se/In2Se3 interdiffusion reaction
012295 (2000-03-06) 1.6 W continuous-wave coherent power from large-index-step (Δn≃0.1) near-resonant, antiguided diode laser arrays
012396 (2000-02-01) Viscoelastic behavior of 80In15Pb5Ag and 50Sn50Pb alloys: Experiment and modeling
013B01 (1999-10-04) Localization of Na impurities at the buried CdS/Cu(In,Ga)Se2 heterojunction
013B99 (1999-09-13) InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality
013C69 (1999-08-16) Single-mode, single-lobe operation of surface-emitting, second-order distributed feedback lasers
013F68 (1999-05-24) Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers
014071 (1999-04-26) The electrical behavior of Pt3In7 and NiIn contacts to p-GaN
014232 (1999-03-08) Observation of intermixing at the buried CdS/Cu(In,Ga)Se2 thin film solar cell heterojunction
014285 (1999-03) The kinetics of indium/amorphous-selenium multilayer thin film reactions
015B10 (1998-10-12) 1.1 W continuous-wave, narrow spectral width (<1 Å) emission from broad-stripe, distributed-feedback diode lasers (λ=0.893 μm)
015C37 (1998-08-31) High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers
015C96 (1998-08-03) 0.45 W diffraction-limited beam and single-frequency operation from antiguided phase-locked laser array with distributed feedback grating
016091 (1998-04) Thermodynamically stable tungsten ohmic contacts to n-In0.53Ga0.47As
016309 (1998-02-09) 730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells
016371 (1998-01-12) High-power near-resonant 1.55 μm emitting InGaAsP/InP antiguided diode laser arrays
016379 (1998-01-05) 6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers
017A61 (1997-09-01) 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers

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