InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
Identifieur interne : 000151 ( Russie/Analysis ); précédent : 000150; suivant : 000152InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
Auteurs : RBID : Pascal:09-0317158Descripteurs français
- Pascal (Inist)
- Electroluminescence, Luminescence, Epitaxie phase liquide, Microscopie force atomique, Microscopie électronique transmission, Caractéristique courant tension, Dislocation, Accommodation réseau, Effet tunnel, Point quantique, Hétérostructure, Composé binaire, Indium Arséniure, Composé minéral, Méthode MOVPE, Jonction p n, Nanomatériau, Epitaxie phase vapeur, Antimoniure d'indium, Anneau quantique, Semiconducteur bande interdite étroite, Arséniure d'indium, Antimoine, InAs, As In, 0130C, 8107, InSb, InAsSbP, Substrat InAs, 0779L.
- Wicri :
- concept : Composé minéral, Antimoine.
English descriptors
- KwdEn :
- Antimony, Atomic force microscopy, Binary compounds, Dislocations, Electroluminescence, Heterostructures, IV characteristic, Indium Arsenides, Indium antimonides, Indium arsenides, Inorganic compounds, LPE, Luminescence, MOVPE method, Mismatch lattice, Nanostructured materials, Narrow band gap semiconductors, Quantum dots, Quantum ring, Transmission electron microscopy, Tunnel effect, VPE, p n junctions.
Abstract
We report a study of InSb quantum dots and quantum rings grown on InAs(100) substrate by LPE-MOVPE combine method. Characterization of InSb/InAs(Sb,P) quantum dots was performed using atomic force microscopy and transmission electron microscopy. The bimodal growth of uncapped InSb quantum dots was observed in the temperature range T=420-450 °C. The low-density (5×108 cm-2) large quantum dots with dimensions of 12-14 nm in height and 45-50 nm in diameter are appeared at 445 °C, whereas high-density (1×1010 cm-2) dislocation-free small quantum dots with dimensions of 3-5 nm in height and 11-13 nm in diameter were obtained at 430 °C. Capping of the InSb quantum dots by binary InAs or InAsSbP epilayers lattice-matched with InAs substrate was performed using MOVPE method. Tunnel-related behavior in a forward curve of I-V characteristics was observed in heterostructures with buried InSb quantum dots inserted in InAs p-n junction. Evolution of electroluminescence spectra on driving current at negative bias and suppression of negative luminescence from buried InSb/InAs quantum dots were found out in the spectral range 3-4 μm at 300 K. Deposition from the InSb melt over the InAsSb0.05P0.10 capping layer resulted in the formation of InSb quantum rings with outer and inner diameters about 20-30 nm and 15-18 nm respectively. Surface density of the quantum rings of 2.6× 1010 cm-2 was reached at 430 °C.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix</title><author><name sortKey="Moiseev, K D" uniqKey="Moiseev K">K. D. Moiseev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Parkhomenko, Ya A" uniqKey="Parkhomenko Y">Ya. A. Parkhomenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Gushchina, E V" uniqKey="Gushchina E">E. V. Gushchina</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Kizhaev, S S" uniqKey="Kizhaev S">S. S. Kizhaev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Ivanov, E V" uniqKey="Ivanov E">E. V. Ivanov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Bert, N A" uniqKey="Bert N">N. A. Bert</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author><author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>St. Petersburg, 194021</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0317158</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0317158 INIST</idno><idno type="RBID">Pascal:09-0317158</idno><idno type="wicri:Area/Main/Corpus">005383</idno><idno type="wicri:Area/Main/Repository">005199</idno><idno type="wicri:Area/Russie/Extraction">000151</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony</term><term>Atomic force microscopy</term><term>Binary compounds</term><term>Dislocations</term><term>Electroluminescence</term><term>Heterostructures</term><term>IV characteristic</term><term>Indium Arsenides</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Inorganic compounds</term><term>LPE</term><term>Luminescence</term><term>MOVPE method</term><term>Mismatch lattice</term><term>Nanostructured materials</term><term>Narrow band gap semiconductors</term><term>Quantum dots</term><term>Quantum ring</term><term>Transmission electron microscopy</term><term>Tunnel effect</term><term>VPE</term><term>p n junctions</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Electroluminescence</term><term>Luminescence</term><term>Epitaxie phase liquide</term><term>Microscopie force atomique</term><term>Microscopie électronique transmission</term><term>Caractéristique courant tension</term><term>Dislocation</term><term>Accommodation réseau</term><term>Effet tunnel</term><term>Point quantique</term><term>Hétérostructure</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Composé minéral</term><term>Méthode MOVPE</term><term>Jonction p n</term><term>Nanomatériau</term><term>Epitaxie phase vapeur</term><term>Antimoniure d'indium</term><term>Anneau quantique</term><term>Semiconducteur bande interdite étroite</term><term>Arséniure d'indium</term><term>Antimoine</term><term>InAs</term><term>As In</term><term>0130C</term><term>8107</term><term>InSb</term><term>InAsSbP</term><term>Substrat InAs</term><term>0779L</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term><term>Antimoine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a study of InSb quantum dots and quantum rings grown on InAs(100) substrate by LPE-MOVPE combine method. Characterization of InSb/InAs(Sb,P) quantum dots was performed using atomic force microscopy and transmission electron microscopy. The bimodal growth of uncapped InSb quantum dots was observed in the temperature range T=420-450 °C. The low-density (5×10<sup>8</sup> cm<sup>-2</sup>) large quantum dots with dimensions of 12-14 nm in height and 45-50 nm in diameter are appeared at 445 °C, whereas high-density (1×10<sup>10</sup> cm<sup>-2</sup>) dislocation-free small quantum dots with dimensions of 3-5 nm in height and 11-13 nm in diameter were obtained at 430 °C. Capping of the InSb quantum dots by binary InAs or InAsSbP epilayers lattice-matched with InAs substrate was performed using MOVPE method. Tunnel-related behavior in a forward curve of I-V characteristics was observed in heterostructures with buried InSb quantum dots inserted in InAs p-n junction. Evolution of electroluminescence spectra on driving current at negative bias and suppression of negative luminescence from buried InSb/InAs quantum dots were found out in the spectral range 3-4 μm at 300 K. Deposition from the InSb melt over the InAsSb<sub>0.05</sub>P<sub>0.10</sub> capping layer resulted in the formation of InSb quantum rings with outer and inner diameters about 20-30 nm and 15-18 nm respectively. Surface density of the quantum rings of 2.6× 10<sup>10</sup> cm<sup>-2</sup> was reached at 430 °C.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7224</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Quantum dots, particles, and nanoclusters VI : 25-28 January 2009, San Jose, California, United States</s1></fA09><fA11 i1="01" i2="1"><s1>MOISEEV (K. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>MIKHAILOVA (M. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>PARKHOMENKO (Ya. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>GUSHCHINA (E. V.)</s1></fA11><fA11 i1="05" i2="1"><s1>KIZHAEV (S. S.)</s1></fA11><fA11 i1="06" i2="1"><s1>IVANOV (E. V.)</s1></fA11><fA11 i1="07" i2="1"><s1>BERT (N. A.)</s1></fA11><fA11 i1="08" i2="1"><s1>YAKOVLEV (Yu. P.)</s1></fA11><fA12 i1="01" i2="1"><s1>EYINK (Kurt Gerard)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SZMULOWICZ (Frank)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>HUFFAKER (Diana Lynne)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>A.F. Ioffe Physico-Technical Institute, RAS, 26 Politekhnicheskaya</s1><s2>St. Petersburg, 194021</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>72240B.1-72240B.9</s2></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham, Wash.</s2></fA25><fA26 i1="01"><s0>978-0-8194-7470-4</s0></fA26><fA26 i1="02"><s0>0-8194-7470-3</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000172953050060</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>17 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0317158</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a study of InSb quantum dots and quantum rings grown on InAs(100) substrate by LPE-MOVPE combine method. Characterization of InSb/InAs(Sb,P) quantum dots was performed using atomic force microscopy and transmission electron microscopy. The bimodal growth of uncapped InSb quantum dots was observed in the temperature range T=420-450 °C. The low-density (5×10<sup>8</sup> cm<sup>-2</sup>) large quantum dots with dimensions of 12-14 nm in height and 45-50 nm in diameter are appeared at 445 °C, whereas high-density (1×10<sup>10</sup> cm<sup>-2</sup>) dislocation-free small quantum dots with dimensions of 3-5 nm in height and 11-13 nm in diameter were obtained at 430 °C. Capping of the InSb quantum dots by binary InAs or InAsSbP epilayers lattice-matched with InAs substrate was performed using MOVPE method. Tunnel-related behavior in a forward curve of I-V characteristics was observed in heterostructures with buried InSb quantum dots inserted in InAs p-n junction. Evolution of electroluminescence spectra on driving current at negative bias and suppression of negative luminescence from buried InSb/InAs quantum dots were found out in the spectral range 3-4 μm at 300 K. Deposition from the InSb melt over the InAsSb<sub>0.05</sub>P<sub>0.10</sub> capping layer resulted in the formation of InSb quantum rings with outer and inner diameters about 20-30 nm and 15-18 nm respectively. Surface density of the quantum rings of 2.6× 10<sup>10</sup> cm<sup>-2</sup> was reached at 430 °C.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="03" i2="3"><s0>001B00G79L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Electroluminescence</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Electroluminescence</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Luminescence</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Luminescence</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0><s5>30</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>LPE</s0><s5>30</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>31</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>31</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>32</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>32</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>41</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>IV characteristic</s0><s5>41</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dislocation</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Dislocations</s0><s5>42</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Accommodation réseau</s0><s5>43</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Mismatch lattice</s0><s5>43</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Acomodación red</s0><s5>43</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Effet tunnel</s0><s5>44</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Tunnel effect</s0><s5>44</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Point quantique</s0><s5>47</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Quantum dots</s0><s5>47</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>48</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Heterostructures</s0><s5>48</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Composé minéral</s0><s5>52</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>52</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>61</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>MOVPE method</s0><s5>61</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>61</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Jonction p n</s0><s5>62</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>p n junctions</s0><s5>62</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>63</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>63</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>64</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>VPE</s0><s5>64</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>65</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>65</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Anneau quantique</s0><s5>66</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Quantum ring</s0><s5>66</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Anillo cuántico</s0><s5>66</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Semiconducteur bande interdite étroite</s0><s5>67</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Narrow band gap semiconductors</s0><s5>67</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>68</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>68</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Antimoine</s0><s2>NC</s2><s5>69</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Antimony</s0><s2>NC</s2><s5>69</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>InAsSbP</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Substrat InAs</s0><s4>INC</s4><s5>87</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>0779L</s0><s4>INC</s4><s5>91</s5></fC03><fN21><s1>229</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Quantum dots, particles, and nanoclusters</s1><s2>6</s2><s3>San Jose CA USA</s3><s4>2009</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
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|clé= Pascal:09-0317158
|texte= InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
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