LMTO ASA method < LPE < Lamellar compound

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 66.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000002 (2013)		Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000011 (2013)		TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000023 (2013)		Electronic properties of a single heterojunction in InSb/InAs quantum dot system
000043 (2012)		Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction
000065 (2011)		Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000105 (2010)		Narrow gap III-V materials for infrared photodiodes and thermophotovoltaic cells
000146 (2009)		Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface
000150 (2009)		InSb quantum dots and quantum rings on InAs-rich surface
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000204 (2008)		Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD
000354 (2005)		P+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
000394 (2005)		384x288 MCT LWIR FPA
000451 (2004)		Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000529 (2003-08)		Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000530 (2003-08)		High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000641 (2003)		LWIR 2x256 focal plane array for time delay and integration
000718 (2002-09)		Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au-Ti Schottky Barriers
000731 (2002-08)		Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000740 (2002-06)		Waveguide InGaAsP/InP Photodetectors for Low-Power Autocorrelation Measurements at 1.55 μm
000796 (2002)		Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

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