VLS growth < VPE < Vacancies

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 40.
[0-20] [0 - 20][0 - 40][20-40]

Ident.	Authors (with country if any)	Title
000002 (2013)		Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000065 (2011)		Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000156 (2009)		High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009)		High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000183 (2008)		Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
000201 (2008)		MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures
000212 (2008)		Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000213 (2008)		Double integrated nanostructures for pulsed 0.9-μm laser diodes
000233 (2007)		Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000239 (2007)		Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®
000246 (2007)		InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range
000338 (2005)		Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
000371 (2005)		Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000450 (2004)		Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000491 (2004)		Correlations between electrical and optical properties for OMVPE InN
000498 (2003-12-08)		Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
000510 (2003-11)		1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000520 (2003-09)		Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy

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