Antimonides arsenides < Antimony < Antimony 132

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]

Ident.	Authors (with country if any)	Title
000002 (2013)		Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000065 (2011)		Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000152 (2009)		InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000226 (2007)		Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
000248 (2007)		High-density InSb-based quantum dots emitting in the mid-infrared
000445 (2004)		Surfactant mediated growth of Sb clusters on Si(111) surface
000463 (2004)		Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction
000601 (2003)		Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface
000B22 (2000-02)		Forbidden Optical Transitions Between Impurity Levels in Silicon and Gallium Phosphide
000D10 (1999-03-29)		Radiative constants in the spectra of ions of the palladium isoelectronic sequence
000D12 (1999-03-15)		Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
001231 (1996)		Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
001277 (1995-11)		Identification of new nuclei at and beyond the proton drip line near the doubly magic nucleus 100Sn
001710 (1992)		Calculations of charge transfer in molten binary systems
001802 (1991)		Influence of isovalent doping with In and Sb on the photoluminescence of complexes formed in epitaxial heavily doped p-type GaAs:Ge
001833 (1991)		Doping effects on mechanical properties and microhardness of superionic copper selenide Cu2-xSe
001841 (1991)		Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films
001912 (1990)		Investigation of isovalent impurity states in GaP using the extended-Hückel and the Mulliken-Wolfsberg-Helmholtz method
001943 (1990)		Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers
001944 (1990)		A new thermodynamic method of calculating melt―solid phase equilibria. The A3B5 system

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