Electrodissolution < Electroluminescence < Electroluminescent device

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 91.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000029 (2012)		Synthesis and luminescence properties of lithium, zinc and scandium 1-(2-pyridyl)naphtholates
000061 (2011)		Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
000074 (2011)		MOVPE of device-oriented wide-band-gap III-N heterostructures
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000111 (2010)		Laterally overgrown GaN/InGaN multi-quantum well heterostructures: Electrical and optical properties
000148 (2009)		Lanthanide imidodiphosphinate complexes Synthesis, structure and new aspects of electroluminescent properties
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000152 (2009)		InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000163 (2009)		Electrical spin-injection and depolarization mechanisms in forward biased ferromagnetic Schottky diodes
000172 (2009)		Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer
000181 (2009)		2-Mercaptobenzothiazolate complexes of rare earth metals and their electroluminescent properties
000182 (2008)		Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
000191 (2008)		Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range
000210 (2008)		Emission properties of InGaAs/GaAs heterostructures with δ-doped barrier
000212 (2008)		Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
000224 (2007)		The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000362 (2005)		Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000482 (2004)		Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000495 (2004)		1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
000513 (2003-10-13)		Electrically tunable mid-infrared electroluminescence from graded cascade structures
000518 (2003-10)		Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface

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