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Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Minnesota »
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Midi-Pyrénées < Minnesota < Missouri (État)  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
[0-20] [0 - 20][0 - 42][20-40]
Ident.Authors (with country if any)Title
006C90 (2008) Ab initio calculations for p-type doped bulk indium phosphide
00C387 (2003-05-15) Effects and microstructures of indium tin oxide seed layers for perpendicular magnetic recording media
00DC77 (2002-11-15) Optical constants of In0.53Ga0.47As/InP: Experiment and modeling
00E210 (2002-05-15) CoB/Pd multilayers with indium tin oxide seedlayer on NiFe underlayer for perpendicular magnetic recording
00FB37 (2001-12-15) Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductors
00FE76 (2001-08-15) Terahertz emission from GaAs and InAs in a magnetic field
00FF15 (2001-08-13) Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs
010071 (2001-06-15) Burstein-Moss shift of n-doped In0.53Ga0.47As/InP
011990 (2000-12-15) Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
011A03 (2000-12-11) Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor
011E01 (2000-07-20) Interface control and band offset at the Ga0.52In0.48P on GaAs heterojunction
012048 (2000-05-01) Perpendicular magnetic recording thin film media using Co/Pd superlattice on ultrathin indium-tin-oxide seed layers
012058 (2000-05-01) Electronic structure of Ni2MnIn for use in spin injection
014189 (1999-03-15) Indium and gallium on Si(001): A closer look at the parallel dimer structure
014379 (1999-02-01) Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements
014518 (1999-01-15) Ensemble Monte Carlo study of electron transport in wurtzite InN
015950 (1998-11-23) Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance
015992 (1998-11-09) InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
015F94 (1998-05) Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
017C50 (1997-07) Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions
017D24 (1997-06-02) Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes

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