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Midi-Pyrénées < Minnesota < Missouri (État)  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
Ident.Authors (with country if any)Title
006C90 (2008) Ab initio calculations for p-type doped bulk indium phosphide
00C387 (2003-05-15) Effects and microstructures of indium tin oxide seed layers for perpendicular magnetic recording media
00DC77 (2002-11-15) Optical constants of In0.53Ga0.47As/InP: Experiment and modeling
00E210 (2002-05-15) CoB/Pd multilayers with indium tin oxide seedlayer on NiFe underlayer for perpendicular magnetic recording
00FB37 (2001-12-15) Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductors
00FE76 (2001-08-15) Terahertz emission from GaAs and InAs in a magnetic field
00FF15 (2001-08-13) Epitaxial growth of ferromagnetic Ni2MnIn on (001) InAs
010071 (2001-06-15) Burstein-Moss shift of n-doped In0.53Ga0.47As/InP
011990 (2000-12-15) Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
011A03 (2000-12-11) Characterization of photoresponse, photovoltage, and photonic gate response in a pseudomorphic p-channel modulation-doped field-effect transistor
011E01 (2000-07-20) Interface control and band offset at the Ga0.52In0.48P on GaAs heterojunction
012048 (2000-05-01) Perpendicular magnetic recording thin film media using Co/Pd superlattice on ultrathin indium-tin-oxide seed layers
012058 (2000-05-01) Electronic structure of Ni2MnIn for use in spin injection
014189 (1999-03-15) Indium and gallium on Si(001): A closer look at the parallel dimer structure
014379 (1999-02-01) Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current-voltage and capacitance-voltage measurements
014518 (1999-01-15) Ensemble Monte Carlo study of electron transport in wurtzite InN
015950 (1998-11-23) Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance
015992 (1998-11-09) InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
015F94 (1998-05) Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
017C50 (1997-07) Local interface composition and extended defect density in ZnSe/GaAs(001) and ZnSe/In0.04Ga0.96As(001) heterojunctions
017D24 (1997-06-02) Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes
017D77 (1997-05-26) Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
017F79 (1997-03-17) Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
018036 (1997-02-24) Surface emission of InxGa1-xN epilayers under strong optical excitation
018156 (1997-01-13) Interface composition and stacking fault density in II-VI/III-V heterostructures
018166 (1997-01-06) Low resistance Ohmic contact scheme (∼μΩ cm2) to p-InP
019684 (1996-12-02) High quality GaN-InGaN heterostructures grown on (111) silicon substrates
019748 (1996-11-04) Time-resolved photoluminescence studies of InGaN epilayers
019778 (1996-11) Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits
019841 (1996-10-14) Cleaved cavity optically pumped InGaN-GaN laser grown on spinel substrates
019924 (1996-09-09) Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current-voltage and capacitance-voltage measurements
019A29 (1996-07-29) Photoluminescence study of high quality InGaN-GaN single heterojunctions
019A64 (1996-07-15) InGaN-GaN based light-emitting diodes over (111) spinel substrates
019C32 (1996-05-27) Response to ′′Comment on ′Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature′ ′′ [Appl. Phys. Lett. 68, 3197 (1996)]
019F70 (1996-02-12) Low resistance Zn3P2/InP heterostructure Ohmic contact to p-InP
01A052 (1996-01-15) Acousto-optic modulation of III-V semiconductor multiple quantum wells
01B871 (1995-07-01) Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure
01B950 (1995-06-12) Ge/Pd (Zn) Ohmic contact scheme on p-InP based on the solid phase regrowth principle
01BC25 (1995-03) Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source
01D177 (1994-12-15) Schottky barrier height modification on n- and p-type GaInP with thin interfacial Si
01D566 (1994-08-01) Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
01DA50 (1994-03) Operation of a molecular-beam epitaxy machine employing a valved solid phosphorus source

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