Midi-Pyrénées < Minnesota < Missouri (État)

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 42.
[20-40] [0 - 20][0 - 42][40-41][40-60]

Ident.	Authors (with country if any)	Title
017D24 (1997-06-02)		Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes
017D77 (1997-05-26)		Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells
017F79 (1997-03-17)		Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
018036 (1997-02-24)		Surface emission of InxGa1-xN epilayers under strong optical excitation
018156 (1997-01-13)		Interface composition and stacking fault density in II-VI/III-V heterostructures
018166 (1997-01-06)		Low resistance Ohmic contact scheme (∼μΩ cm2) to p-InP
019684 (1996-12-02)		High quality GaN-InGaN heterostructures grown on (111) silicon substrates
019748 (1996-11-04)		Time-resolved photoluminescence studies of InGaN epilayers
019778 (1996-11)		Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits
019841 (1996-10-14)		Cleaved cavity optically pumped InGaN-GaN laser grown on spinel substrates
019924 (1996-09-09)		Characterization of interface charge at Ga0.52In0.48P/GaAs junctions using current-voltage and capacitance-voltage measurements
019A29 (1996-07-29)		Photoluminescence study of high quality InGaN-GaN single heterojunctions
019A64 (1996-07-15)		InGaN-GaN based light-emitting diodes over (111) spinel substrates
019C32 (1996-05-27)		Response to ′′Comment on ′Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature′ ′′ [Appl. Phys. Lett. 68, 3197 (1996)]
019F70 (1996-02-12)		Low resistance Zn3P2/InP heterostructure Ohmic contact to p-InP
01A052 (1996-01-15)		Acousto-optic modulation of III-V semiconductor multiple quantum wells
01B871 (1995-07-01)		Comparison of polycrystalline Cu(In,Ga)Se2 device efficiency with junction depth and interfacial structure
01B950 (1995-06-12)		Ge/Pd (Zn) Ohmic contact scheme on p-InP based on the solid phase regrowth principle
01BC25 (1995-03)		Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source
01D177 (1994-12-15)		Schottky barrier height modification on n- and p-type GaInP with thin interfacial Si
01D566 (1994-08-01)		Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

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