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List of bibliographic references

Number of relevant bibliographic references: 152.
[0-50] [0 - 20][0 - 50][50-70]
Ident.Authors (with country if any)Title
003E94 (2010) Influence of dendrimer generation and polyethylene glycol length on the biodistribution of PEGylated dendrimers
004567 (2010) Comparison of linear-mode avalanche photodiode lidar receivers for use at one micron wavelength
004F09 (2009) Noninvasive in vivo imaging of CD4 cells in simian-human immunodeficiency virus (SHIV)-infected nonhuman primates
00A362 (2005) 4-connected metal-organic assemblies mediated via heterochelation and bridging of single metal ions : Kagome lattice and the M6L12 octahedron
00A499 (2004-05-03) Device deformation during low-frequency pulsed operation of high-power diode bars
00A610 (2004-04-05) Compositionally graded contact layers in quantum-well infrared photodetectors
00A746 (2004-03) Smooth and vertical-sidewall InP etching using Cl2/N2 inductively coupled plasma
00BD32 (2003-12-15) Nitrogen-activated bowing of dilute InyGa1-yAs1-xNx based on photoreflectance studies
00BD33 (2003-12-15) Laterally patterned band structure in micromachined semiconductors
00C258 (2003-06-20) Optical approach for determining strain anisotropy in quantum wells
00C302 (2003-06-02) Mixing characteristics of InGaAs metal-semiconductor-metal photodetectors with Schottky enhancement layers
00C338 (2003-05-26) InAs nanowires and whiskers grown by reaction of indium with GaAs
00C455 (2003-04-21) Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
00C644 (2003-02-15) Bloch-phonon coupling and tunneling-induced coherent phonon excitation in semiconductor superlattices
00C761 (2003-01-01) Lateral composition modulation in InAs/GaSb superlattices
00C784 (2003-01) Comparison of HgCdTe and quantum-well infrared photodetector dual-band focal plane arrays
00DC01 (2002-12-15) Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding
00DC17 (2002-12-02) Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice
00DD63 (2002-10-15) Spectroscopy of an ensemble of In0.50Ga0.50As quantum dots following highly localized hole injection by a scanning tunneling microscope
00DE57 (2002-09-15) Characterization of one-dimensional quantum channels in InAs/AlSb
00DF19 (2002-08-19) High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector
00E056 (2002-07-01) Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors
00E261 (2002-05) Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier
00E300 (2002-04-22) Stimulated-emission-induced enhancement of the decay rate of longitudinal optical phonons in III-V semiconductors
00E303 (2002-04-22) Measurements of InGaAs metal-semiconductor-metal photodetectors under high-illumination conditions
00E324 (2002-04-15) Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power
00E457 (2002-03-01) Anisotropic three-dimensional magnetic fluctuations in heavy fermion CeRhIn5
00E519 (2002-02-18) A nanofabrication scheme for InAs/AlSb heterostructures
00E621 (2002-01-15) Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices
00E874 (2002) Template fabrication schemes for step and flash imprint lithography
00FC59 (2001-11) Ionization of boron, aluminum, gallium, and indium by electron impact
00FD31 (2001-10-01) Radiation response of n-type base InP solar cells
00FD36 (2001-10-01) Irradiation effects in InGaAs/InAlAs high electron mobility transistors
00FD70 (2001-09-24) Infrared photodetector based on intersubband transitions to minigap-confined states in doped quantum wells
00FE02 (2001-09-15) Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells
00FE43 (2001-09) Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls
00FE62 (2001-08-27) Size-Dependent Melting of Self-Assembled Indium Nanostructures
00FF41 (2001-07-16) High-detectivity, normal-incidence, mid-infrared (λ∼4μm)InAs/GaAs quantum-dot detector operating at 150 K
00FF90 (2001-07-01) Magnetic structure of heavy-fermion Ce2RhIn8
010025 (2001-07) Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability
010104 (2001-06-01) Evidence of exciton recombination at very high temperature in InGaN
010161 (2001-05-15) Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions
010264 (2001-04-15) Vertically coupled GaInAsP-InP microring resonators
010580 (2001-01-01) Accelerated and reproducible oxidation of strain-compensated short-period superlattice structures for incorporation in InP based devices
010741 (2001) The role of oxidative stress in indium phosphide-induced lung carcinogenesis in rats
011A17 (2000-12-01) Incommensurate magnetic structure of CeRhIn5
011A21 (2000-12-01) Disorder effects in reduced dimension: Indium-phosphide-based resonant tunneling diodes
011B11 (2000-11-01) Nanometer-size InAs/AlSb quantum wires: Fabrication and characterization of Aharonov-Bohm quantum rings
011B30 (2000-11) Fabrication technique for nanometer-scale InAs quantum devices: Observation of quantum interference in Aharonov-Bohm rings and Coulomb blockade in quantum dots
011B38 (2000-10-30) Nanometer-scale quantum channels defined by reactive ion etching in InAs/AlSb heterojunctions
011C98 (2000-09) Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors

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