Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Massachusetts »
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Maryland < Massachusetts < Michigan  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 294.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000044 (2014) Solar thermophotovoltaic energy conversion systems with two-dimensional tantalum photonic crystal absorbers and emitters
000468 (2013) Structure Improvement and Joint Resistance Estimation in Demountable Butt and Edge Joints of a Stacked REBCO Conductor Within a Metal Jacket
000B10 (2013) In0.53Ga0.47As/GaAs0.5Sb0.5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics
000C50 (2013) Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
000C66 (2013) Fundamental Insights into Nanowire Diameter Modulation and the Liquid/Solid Interface
001276 (2012) Using the G' Raman Cross-Section To Understand the Phonon Dynamics in Bilayer Graphene Systems
001395 (2012) The Anthrobiogeochemical Cycle of Indium: A Review of the Natural and Anthropogenic Cycling of Indium in the Environment
001474 (2012) Submicron Mapping of Thermal Conductivity of Thermoelectric Thin Films
001A45 (2012) Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs
002A64 (2011) Long wavelength infrared detection using amorphous InSb and InAs0.3Sb0.7
002B16 (2011) Investigation of plasmonic resonances in the two-dimensional electron gas of an InGaAs/InP high electron mobility transistor
002C86 (2011) Improved Current Extraction from ZnO/PbS Quantum Dot Heterojunction Photovoltaics Using a Mo03 Interfacial Layer
002F78 (2011) Engineering an antibody with picomolar affinity to DOTA chelates of multiple radionuclides for pretargeted radioimmunotherapy and imaging
003089 (2011) Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1-xGex/Si substrate
003290 (2011) Compositionally-graded InGaAs-InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs
003372 (2011) Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs
003539 (2011) 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
003886 (2010) Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials
004009 (2010) High-quality metamorphic compositionally graded InGaAs buffers
004020 (2010) High-Power, Ultralow-Noise Semiconductor External Cavity Lasers Based on Low-Confinement Optical Waveguide Gain Media
004531 (2010) Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method

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