AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

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Maine (État) < Maryland < Massachusetts  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 152.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
00DF19 (2002-08-19) High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector
00E056 (2002-07-01) Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors
00E261 (2002-05) Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier
00E300 (2002-04-22) Stimulated-emission-induced enhancement of the decay rate of longitudinal optical phonons in III-V semiconductors
00E303 (2002-04-22) Measurements of InGaAs metal-semiconductor-metal photodetectors under high-illumination conditions
00E324 (2002-04-15) Modeling of Q-switched semiconductor lasers based on type-II quantum wells: Increasing the pulse energy and peak power
00E457 (2002-03-01) Anisotropic three-dimensional magnetic fluctuations in heavy fermion CeRhIn5
00E519 (2002-02-18) A nanofabrication scheme for InAs/AlSb heterostructures
00E621 (2002-01-15) Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices
00E874 (2002) Template fabrication schemes for step and flash imprint lithography
00FC59 (2001-11) Ionization of boron, aluminum, gallium, and indium by electron impact
00FD31 (2001-10-01) Radiation response of n-type base InP solar cells
00FD36 (2001-10-01) Irradiation effects in InGaAs/InAlAs high electron mobility transistors
00FD70 (2001-09-24) Infrared photodetector based on intersubband transitions to minigap-confined states in doped quantum wells
00FE02 (2001-09-15) Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells
00FE43 (2001-09) Process development of methane-hydrogen-argon-based deep dry etching of InP for high aspect-ratio structures with vertical facet-quality sidewalls
00FE62 (2001-08-27) Size-Dependent Melting of Self-Assembled Indium Nanostructures
00FF41 (2001-07-16) High-detectivity, normal-incidence, mid-infrared (λ∼4μm)InAs/GaAs quantum-dot detector operating at 150 K
00FF90 (2001-07-01) Magnetic structure of heavy-fermion Ce2RhIn8
010025 (2001-07) Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability
010104 (2001-06-01) Evidence of exciton recombination at very high temperature in InGaN

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