| Ident. | Authors (with country if any) | Title |
|---|
| 00A403 (2004-06-14) |
| Measurement of spin polarization by Andreev reflection in ferromagnetic In1-xMnxSb epilayers |
| 00B196 (2004) |
| Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy |
| 00BE43 (2003-11-03) |
| Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys |
| 00C265 (2003-06-16) |
| In1-xMnxSb-a narrow-gap ferromagnetic semiconductor |
| 00C371 (2003-05-15) |
| Lyman spectrum of holes bound to substitutional 3d transition metal ions in a III-V host: GaAs(Mn2+, Co2+, or Cu2+), GaP(Mn2+), and InP(Mn2+) |
| 00C385 (2003-05-15) |
| Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP2 |
| 00CB78 (2003) |
| Some evidences of ordering in InGaP layers grown by liquid phase epitaxy |
| 00CD06 (2003) |
| Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys |
| 00DD00 (2002-11-11) |
| Ultrafast dynamics of interfacial electric fields in semiconductor heterostructures monitored by pump-probe second-harmonic generation |
| 00E031 (2002-07-08) |
| Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation |
| 00E394 (2002-03-25) |
| Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode |
| 00FA84 (2001-12-31) |
| Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN |
| 00FD36 (2001-10-01) |
| Irradiation effects in InGaAs/InAlAs high electron mobility transistors |
| 00FE86 (2001-08-15) |
| Observation of excitation transfer among neighboring quantum dots |
| 010069 (2001-06-15) |
| Comment on Phonon modes in spontaneously ordered GaInP2 studied by micro-Raman scattering measurements |
| 010462 (2001-02-15) |
| Electron paramagnetic resonance of Mn in In1-xMnxAs epilayers |
| 010480 (2001-02-12) |
| Correlation of defect profiles with carrier profiles of InAs epilayers on GaP |
| 010494 (2001-02-01) |
| Phonon dispersion of indium along [111] |
| 011230 (2001) |
| Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers |
| 011A11 (2000-12-01) |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 011B44 (2000-10-23) |
| Effects of prewells on transport in p-type resonant tunneling diodes |
| 011D17 (2000-08-21) |
| Growth temperature dependence of transport properties of InAs epilayers grown on GaP |
| 011F82 (2000-05-29) |
| Reliable contacts to two-dimensional conduction layers |
| 012386 (2000-02-14) |
| Probing the Plateau-Insulator Quantum Phase Transition in the Quantum Hall Regime |
| 012397 (2000-02-01) |
| Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP |
| 013E64 (1999-07) |
| Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures |
| 013F88 (1999-05-15) |
| Diffraction satellites in indium caused by thermal-diffuse scattering |
| 014165 (1999-03-29) |
| Shape Transition in Growth of Strained Islands |
| 014192 (1999-03-15) |
| Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy |
| 014229 (1999-03-08) |
| Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs |
| 015982 (1998-11-15) |
| Asymmetric Stark shift in AlxIn1-xAs/AlyGa1-yAs self-assembled dots |
| 015A56 (1998-11) |
| Bandwidth study of volume holography in photorefractive InP:Fe for femtosecond pulse readout at 1.5 μm |
| 015D16 (1998-08) |
| Electron capture decay of 116In and nuclear structure of double β decays |
| 015F49 (1998-05-15) |
| Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers |
| 015F60 (1998-05-04) |
| Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface |
| 016035 (1998-04-27) |
| Local optical spectroscopy of self-assembled quantum dots using a near-field optical fiber probe to induce a localized strain field |
| 016132 (1998-03-16) |
| Self-forming InAs/GaP quantum dots by direct island growth |
| 016337 (1998-01-26) |
| Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells |
| 017869 (1997-11-08) |
| Electron spin resonance matrix isolation studies of 27Al16,17O, 69,71Ga16,17O and 115In16,17O: Observed hyperfine interactions compared with ab initio theoretical results |
| 017912 (1997-11) |
| Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching |
| 017B22 (1997-08-15) |
| Diffusivity transients and radiative recombination in intermixed In0.5Ga0.5As/GaAs quantum structures |
| 017B79 (1997-07-28) |
| High voltage GaInP/GaAs dual-material Schottky rectifiers |
| 017C94 (1997-06-15) |
| Quantum Hall liquid-to-insulator transition in In1-xGaxAs/InP heterostructures |
| 017E17 (1997-05-12) |
| Self-assembled island formation in heteroepitaxial growth |
| 017E90 (1997-04-15) |
| Magnetic and magnetoresistance measurements on iron-based nanoclusters in In0.53Ga0.47As |
| 017F56 (1997-03-24) |
| Electrical characteristics of nearly relaxed InAs/GaP heterojunctions |
| 019639 (1996-12-23) |
| Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown InGaAs/InAlAs multiple quantum wells |
| 019667 (1996-12-15) |
| Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases |
| 019778 (1996-11) |
| Process technology for monolithic high-speed Schottky/resonant tunneling diode logic integrated circuits |
| 019991 (1996-08-12) |
| Incoherent interface of InAs grown directly on GaP(001) |
| 019A11 (1996-08-01) |
| Photovoltaic effect in small superconducting-normal-metal systems |
