AffRegion.i
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Idaho < Illinois < Indiana  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 363.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
00A406 (2004-06-07) Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor
00A430 (2004-06-01) Crystalline electric field excitations in the heavy fermion superconductor CeCoIn5
00A481 (2004-05-10) A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes
00A485 (2004-05-03) Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers
00A490 (2004-05-03) Organic light-emitting devices with laminated top contacts
00A561 (2004-04-19) The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation
00A651 (2004-04) Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
00A671 (2004-03-29) Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
00A677 (2004-03-22) High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition
00A679 (2004-03-22) Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
00A687 (2004-03-15) Quantum-well-base heterojunction bipolar light-emitting transistor
00A809 (2004-02-02) Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
00A887 (2004-01-05) Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors
00A889 (2004-01-05) Effect of acidic and basic surface dipoles on the depletion layer of indium tin oxide as measured by in-plane conductance
00A902 (2004-01) Ultrasensitive, fast, thin-film differential scanning calorimeter
00BD58 (2003-12-08) Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser
00BE01 (2003-11-17) Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
00BE78 (2003-11) Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications
00BF17 (2003-10-13) Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP
00BF36 (2003-10-01) High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
00C038 (2003-08-25) Publishers Note: Surface morphology control of InAs nanostructures grown on InGaAs/InP [Appl. Phys. Lett. 82, 4555 (2003)]

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