Brême (Land) < Californie < Canaries

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List of bibliographic references

Number of relevant bibliographic references: 964.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000D33 (2013)		Equation of state and electrical resistivity of the heavy fermion superconductor CeCoIn5 to 51 GPa
002102 (2012)		A Simple DC to 110 GHz MMIC True Time Delay Line
002907 (2011)		Novel Pt/Mg(In)(Al)O catalysts for ethane and propane dehydrogenation
006517 (2008)		In vivo imaging of mucosal CD4+ T cells using single photon emission computed tomography in a murine model of colitis
006D74 (2007)		Very high power 1310nm InP single mode distributed feed back laser diode with reduced linewidth
007205 (2007)		Randomly-oriented indium phosphide nanowires for optoelectronics
007393 (2007)		Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells
007604 (2007)		MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures
008204 (2006)		The challenges in guided self-assembly of Ge and InAs quantum dots on Si
008342 (2006)		Structural defects in Si-doped III-V nitrides
00A027 (2005)		Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs sacm avalanche photodiodes
00A405 (2004-06-07)		Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
00A411 (2004-06-07)		Measurement of polarization charge and conduction-band offset at InxGa1-xN/GaN heterojunction interfaces
00A426 (2004-06-01)		Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups
00A430 (2004-06-01)		Crystalline electric field excitations in the heavy fermion superconductor CeCoIn5
00A443 (2004-05-31)		Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects
00A451 (2004-05-24)		Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment
00A479 (2004-05-10)		InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
00A494 (2004-05-03)		High frequency oscillation in photonic crystal nanolasers
00A495 (2004-05-03)		High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
00A505 (2004-05-01)		Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures

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