Brême (Land) < Californie < Canaries

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 964.
[0-50] [0 - 20][0 - 50][50-70]

Ident.	Authors (with country if any)	Title
000D33 (2013)		Equation of state and electrical resistivity of the heavy fermion superconductor CeCoIn5 to 51 GPa
002102 (2012)		A Simple DC to 110 GHz MMIC True Time Delay Line
002907 (2011)		Novel Pt/Mg(In)(Al)O catalysts for ethane and propane dehydrogenation
006517 (2008)		In vivo imaging of mucosal CD4+ T cells using single photon emission computed tomography in a murine model of colitis
006D74 (2007)		Very high power 1310nm InP single mode distributed feed back laser diode with reduced linewidth
007205 (2007)		Randomly-oriented indium phosphide nanowires for optoelectronics
007393 (2007)		Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells
007604 (2007)		MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures
008204 (2006)		The challenges in guided self-assembly of Ge and InAs quantum dots on Si
008342 (2006)		Structural defects in Si-doped III-V nitrides
00A027 (2005)		Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs sacm avalanche photodiodes
00A405 (2004-06-07)		Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
00A411 (2004-06-07)		Measurement of polarization charge and conduction-band offset at InxGa1-xN/GaN heterojunction interfaces
00A426 (2004-06-01)		Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups
00A430 (2004-06-01)		Crystalline electric field excitations in the heavy fermion superconductor CeCoIn5
00A443 (2004-05-31)		Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects
00A451 (2004-05-24)		Indium versus hydrogen-terminated GaN(0001) surfaces: Surfactant effect of indium in a chemical vapor deposition environment
00A479 (2004-05-10)		InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
00A494 (2004-05-03)		High frequency oscillation in photonic crystal nanolasers
00A495 (2004-05-03)		High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication
00A505 (2004-05-01)		Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures
00A542 (2004-05)		Etching mechanism of a GaN/InGaN/GaN heterostructure in Cl2- and CH4-based inductively coupled plasmas
00A558 (2004-04-26)		High detectivity InAs quantum dot infrared photodetectors
00A595 (2004-04-12)		Effects of electron concentration on the optical absorption edge of InN
00A599 (2004-04-05)		Thermoelectric figure of merit and maximum power factor in III-V semiconductor nanowires
00A609 (2004-04-05)		Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission
00A621 (2004-04-01)		High-power limitation of passive ring-resonator-coupled lasers in the presence of material nonlinearity
00A673 (2004-03-22)		The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4)
00A678 (2004-03-22)		Competing processes in the surface ordering of InAs islands using a subsurface island superlattice
00A699 (2004-03-15)		High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
00A723 (2004-03-01)		Self-assembled InAsSb quantum dots on (001) InP substrates
00A752 (2004-03)		Materials growth for InAs high electron mobility transistors and circuits
00A784 (2004-02-15)		Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
00A830 (2004-02)		Synthesis and characterization of single-crystal indium nitride nanowires
00A843 (2004-01-26)		Two-dimensional photonic crystal Mach-Zehnder interferometers
00A844 (2004-01-26)		Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)
00A879 (2004-01-12)		Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate
00A893 (2004-01-01)		Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen
00A914 (2004-01)		Fabrication of InP-based two-dimensional photonic crystal membrane
00A972 (2004)		Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields
00BC06 (2004)		A study of regrowth interface and material quality for a novel InP-based architecture
00BD06 (2003-12-29)		InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation
00BD09 (2003-12-29)		Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1-y grown on GaAs(001) substrates
00BD39 (2003-12-15)		Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys
00BD75 (2003-12-01)		Bipolar cascade lasers with quantum well tunnel junctions
00BD92 (2003-11-22)		Monitoring chemical reactions at a liquid-solid interface: Water on CuIn(S,Se)2 thin film solar cell absorbers
00BD94 (2003-11-17)		Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers
00BE05 (2003-11-15)		Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system
00BE20 (2003-11-15)		InAs/GaAs square nanomesas: Multimillion-atom molecular dynamics simulations on parallel computers
00BE31 (2003-11-10)		Temperature dependence of intersubband transitions in InAs/AlSb quantum wells
00BE33 (2003-11-10)		Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm

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