AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Californie »
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Brême (Land) < Californie < Canaries  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 964.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
00A505 (2004-05-01) Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures
00A542 (2004-05) Etching mechanism of a GaN/InGaN/GaN heterostructure in Cl2- and CH4-based inductively coupled plasmas
00A558 (2004-04-26) High detectivity InAs quantum dot infrared photodetectors
00A595 (2004-04-12) Effects of electron concentration on the optical absorption edge of InN
00A599 (2004-04-05) Thermoelectric figure of merit and maximum power factor in III-V semiconductor nanowires
00A609 (2004-04-05) Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission
00A621 (2004-04-01) High-power limitation of passive ring-resonator-coupled lasers in the presence of material nonlinearity
00A673 (2004-03-22) The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4)
00A678 (2004-03-22) Competing processes in the surface ordering of InAs islands using a subsurface island superlattice
00A699 (2004-03-15) High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
00A723 (2004-03-01) Self-assembled InAsSb quantum dots on (001) InP substrates
00A752 (2004-03) Materials growth for InAs high electron mobility transistors and circuits
00A784 (2004-02-15) Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence
00A830 (2004-02) Synthesis and characterization of single-crystal indium nitride nanowires
00A843 (2004-01-26) Two-dimensional photonic crystal Mach-Zehnder interferometers
00A844 (2004-01-26) Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)
00A879 (2004-01-12) Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate
00A893 (2004-01-01) Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen
00A914 (2004-01) Fabrication of InP-based two-dimensional photonic crystal membrane
00A972 (2004) Ultrafast creation and annihilation of space-charge domains in a semiconductor superlattice observed by use of Terahertz fields
00BC06 (2004) A study of regrowth interface and material quality for a novel InP-based architecture

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