Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy
Identifieur interne : 003742 ( Main/Exploration ); précédent : 003741; suivant : 003743Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy
Auteurs : K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. CordedduSource :
- Applied physics letters [ 0003-6951 ] ; 1992.
Descripteurs français
- Pascal (Inist)
- Wicri :
- topic : Composé minéral.
English descriptors
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Abstract
Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm3+-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm3+ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm3+-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Tm<sup>3+</sup>-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title><author><name sortKey="Pressel, K" sort="Pressel, K" uniqKey="Pressel K" first="K." last="Pressel">K. Pressel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. Stuttgart, IV. Physikalisches Inst.</s1><s2>7000 Stuttgart</s2><s3>DEU</s3><sZ>1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut., 7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>7000 Stuttgart</wicri:noRegion><placeName><settlement type="city">Stuttgart</settlement><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Stuttgart</region></placeName></affiliation></author><author><name sortKey="Weber, J" sort="Weber, J" uniqKey="Weber J" first="J." last="Weber">J. Weber</name></author><author><name sortKey="Hiller, C" sort="Hiller, C" uniqKey="Hiller C" first="C." last="Hiller">C. Hiller</name></author><author><name sortKey="Ottenw Lder, D" sort="Ottenw Lder, D" uniqKey="Ottenw Lder D" first="D." last="Ottenw Lder">D. Ottenw Lder</name></author><author><name sortKey="Kurner, W" sort="Kurner, W" uniqKey="Kurner W" first="W." last="Kürner">W. Kürner</name></author><author><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name></author><author><name sortKey="Scholz, F" sort="Scholz, F" uniqKey="Scholz F" first="F." last="Scholz">F. Scholz</name></author><author><name sortKey="Locke, K" sort="Locke, K" uniqKey="Locke K" first="K." last="Locke">K. Locke</name></author><author><name sortKey="Wiedmann, D" sort="Wiedmann, D" uniqKey="Wiedmann D" first="D." last="Wiedmann">D. Wiedmann</name></author><author><name sortKey="Cordeddu, F" sort="Cordeddu, F" uniqKey="Cordeddu F" first="F." last="Cordeddu">F. Cordeddu</name></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">92-0499350</idno><date when="1992">1992</date><idno type="stanalyst">PASCAL 92-0499350 INIST</idno><idno type="RBID">Pascal:92-0499350</idno><idno type="wicri:Area/Pascal/Corpus">001A03</idno><idno type="wicri:Area/Pascal/Curation">001A03</idno><idno type="wicri:Area/Pascal/Checkpoint">001937</idno><idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">001937</idno><idno type="wicri:Area/Main/Merge">003A47</idno><idno type="wicri:Area/Main/Curation">003742</idno><idno type="wicri:Area/Main/Exploration">003742</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Tm<sup>3+</sup>-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title><author><name sortKey="Pressel, K" sort="Pressel, K" uniqKey="Pressel K" first="K." last="Pressel">K. Pressel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. Stuttgart, IV. Physikalisches Inst.</s1><s2>7000 Stuttgart</s2><s3>DEU</s3><sZ>1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut., 7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>7000 Stuttgart</wicri:noRegion><placeName><settlement type="city">Stuttgart</settlement><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Stuttgart</region></placeName></affiliation></author><author><name sortKey="Weber, J" sort="Weber, J" uniqKey="Weber J" first="J." last="Weber">J. Weber</name></author><author><name sortKey="Hiller, C" sort="Hiller, C" uniqKey="Hiller C" first="C." last="Hiller">C. Hiller</name></author><author><name sortKey="Ottenw Lder, D" sort="Ottenw Lder, D" uniqKey="Ottenw Lder D" first="D." last="Ottenw Lder">D. Ottenw Lder</name></author><author><name sortKey="Kurner, W" sort="Kurner, W" uniqKey="Kurner W" first="W." last="Kürner">W. Kürner</name></author><author><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name></author><author><name sortKey="Scholz, F" sort="Scholz, F" uniqKey="Scholz F" first="F." last="Scholz">F. Scholz</name></author><author><name sortKey="Locke, K" sort="Locke, K" uniqKey="Locke K" first="K." last="Locke">K. Locke</name></author><author><name sortKey="Wiedmann, D" sort="Wiedmann, D" uniqKey="Wiedmann D" first="D." last="Wiedmann">D. Wiedmann</name></author><author><name sortKey="Cordeddu, F" sort="Cordeddu, F" uniqKey="Cordeddu F" first="F." last="Cordeddu">F. Cordeddu</name></author></analytic><series><title level="j" type="main">Applied physics letters</title><title level="j" type="abbreviated">Appl. phys. lett.</title><idno type="ISSN">0003-6951</idno><imprint><date when="1992">1992</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Applied physics letters</title><title level="j" type="abbreviated">Appl. phys. lett.</title><idno type="ISSN">0003-6951</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium Arsenides</term><term>Gallium Indium Phosphides Mixed</term><term>Gallium Phosphides</term><term>Impurity</term><term>Indium Phosphides</term><term>Inorganic compound</term><term>Optical transition</term><term>Photoluminescence</term><term>Semiconductor materials</term><term>Thulium</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Photoluminescence</term><term>Transition optique</term><term>Impureté</term><term>Semiconducteur</term><term>Composé minéral</term><term>Gallium Arséniure</term><term>Indium Phosphure</term><term>Gallium Phosphure</term><term>Gallium Indium Phosphure Mixte</term><term>Thulium</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm<sup>3+</sup>-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup> 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature</div></front></TEI><affiliations><list><country><li>Allemagne</li></country><region><li>Bade-Wurtemberg</li><li>District de Stuttgart</li></region><settlement><li>Stuttgart</li></settlement></list><tree><noCountry><name sortKey="Cordeddu, F" sort="Cordeddu, F" uniqKey="Cordeddu F" first="F." last="Cordeddu">F. Cordeddu</name><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name><name sortKey="Hiller, C" sort="Hiller, C" uniqKey="Hiller C" first="C." last="Hiller">C. Hiller</name><name sortKey="Kurner, W" sort="Kurner, W" uniqKey="Kurner W" first="W." last="Kürner">W. Kürner</name><name sortKey="Locke, K" sort="Locke, K" uniqKey="Locke K" first="K." last="Locke">K. Locke</name><name sortKey="Ottenw Lder, D" sort="Ottenw Lder, D" uniqKey="Ottenw Lder D" first="D." last="Ottenw Lder">D. Ottenw Lder</name><name sortKey="Scholz, F" sort="Scholz, F" uniqKey="Scholz F" first="F." last="Scholz">F. Scholz</name><name sortKey="Weber, J" sort="Weber, J" uniqKey="Weber J" first="J." last="Weber">J. Weber</name><name sortKey="Wiedmann, D" sort="Wiedmann, D" uniqKey="Wiedmann D" first="D." last="Wiedmann">D. Wiedmann</name></noCountry><country name="Allemagne"><region name="Bade-Wurtemberg"><name sortKey="Pressel, K" sort="Pressel, K" uniqKey="Pressel K" first="K." last="Pressel">K. Pressel</name></region></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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