ThuliumV1, Main, Curation, bibRecord, 003742

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Identifieur interne : 003742 ( Main/Curation ); précédent : 003741; suivant : 003743

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Auteurs : K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. Cordeddu

Source :

Applied physics letters [ 0003-6951 ] ; 1992.

RBID : Pascal:92-0499350

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Photoluminescence, Transition optique, Impureté, Semiconducteur, Composé minéral, Gallium Arséniure, Indium Phosphure, Gallium Phosphure, Gallium Indium Phosphure Mixte, Thulium.
Wicri :
- topic : Composé minéral.

English descriptors

KwdEn :
- Experimental study, Gallium Arsenides, Gallium Indium Phosphides Mixed, Gallium Phosphides, Impurity, Indium Phosphides, Inorganic compound, Optical transition, Photoluminescence, Semiconductor materials, Thulium.

Abstract

Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm³⁺-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm³⁺ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm³⁺-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature

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Pascal:92-0499350

Le document en format XML

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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
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<country>Allemagne</country>
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<author><name sortKey="Ottenw Lder, D" sort="Ottenw Lder, D" uniqKey="Ottenw Lder D" first="D." last="Ottenw Lder">D. Ottenw Lder</name>
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<author><name sortKey="Kurner, W" sort="Kurner, W" uniqKey="Kurner W" first="W." last="Kürner">W. Kürner</name>
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<author><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name>
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<author><name sortKey="Scholz, F" sort="Scholz, F" uniqKey="Scholz F" first="F." last="Scholz">F. Scholz</name>
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<author><name sortKey="Wiedmann, D" sort="Wiedmann, D" uniqKey="Wiedmann D" first="D." last="Wiedmann">D. Wiedmann</name>
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<author><name sortKey="Kurner, W" sort="Kurner, W" uniqKey="Kurner W" first="W." last="Kürner">W. Kürner</name>
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<author><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name>
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<term>Gallium Arsenides</term>
<term>Gallium Indium Phosphides Mixed</term>
<term>Gallium Phosphides</term>
<term>Impurity</term>
<term>Indium Phosphides</term>
<term>Inorganic compound</term>
<term>Optical transition</term>
<term>Photoluminescence</term>
<term>Semiconductor materials</term>
<term>Thulium</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
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<term>Semiconducteur</term>
<term>Composé minéral</term>
<term>Gallium Arséniure</term>
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<term>Gallium Phosphure</term>
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<front><div type="abstract" xml:lang="en">Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm<sup>3+</sup>
-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature</div>
</front>
</TEI>
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Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri