Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy
Identifieur interne : 001A03 ( Pascal/Curation ); précédent : 001A02; suivant : 001A04Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy
Auteurs : K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. CordedduSource :
- Applied physics letters [ 0003-6951 ] ; 1992.
Descripteurs français
- Pascal (Inist)
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- topic : Composé minéral.
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- KwdEn :
Abstract
Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm3+-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm3+ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm3+-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature
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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
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<s2>7000 Stuttgart</s2>
<s3>DEU</s3>
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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
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<term>Gallium Indium Phosphides Mixed</term>
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<term>Impurity</term>
<term>Indium Phosphides</term>
<term>Inorganic compound</term>
<term>Optical transition</term>
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<term>Impureté</term>
<term>Semiconducteur</term>
<term>Composé minéral</term>
<term>Gallium Arséniure</term>
<term>Indium Phosphure</term>
<term>Gallium Phosphure</term>
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<front><div type="abstract" xml:lang="en">Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm<sup>3+</sup>
-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature</div>
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-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
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<s2>FX</s2>
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<s2>FX</s2>
<s2>NA</s2>
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<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
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<fC03 i1="10" i2="X" l="SPA"><s0>Galio Indio Fosfuro Mixto</s0>
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<s2>FX</s2>
<s2>NA</s2>
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<s2>NC</s2>
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<fC03 i1="11" i2="X" l="GER"><s0>Thulium</s0>
<s2>NC</s2>
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<fC03 i1="11" i2="X" l="SPA"><s0>Tulio</s0>
<s2>NC</s2>
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<fN21><s1>289</s1>
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