ThuliumV1, Pascal, Curation, bibRecord, 001A03

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Identifieur interne : 001A03 ( Pascal/Curation ); précédent : 001A02; suivant : 001A04

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Auteurs : K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. Cordeddu

Source :

Applied physics letters [ 0003-6951 ] ; 1992.

RBID : Pascal:92-0499350

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Photoluminescence, Transition optique, Impureté, Semiconducteur, Composé minéral, Gallium Arséniure, Indium Phosphure, Gallium Phosphure, Gallium Indium Phosphure Mixte, Thulium.
Wicri :
- topic : Composé minéral.

English descriptors

KwdEn :
- Experimental study, Gallium Arsenides, Gallium Indium Phosphides Mixed, Gallium Phosphides, Impurity, Indium Phosphides, Inorganic compound, Optical transition, Photoluminescence, Semiconductor materials, Thulium.

Abstract

Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm³⁺-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm³⁺ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm³⁺-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature

A01	`01`	`1`		`@0 0003-6951`
A02	`01`			`@0 APPLAB`
A03		`1`		`@0 Appl. phys. lett.`
A05				`@2 61`
A06				`@2 5`
A08	`01`	`1`	`ENG`	`@1 Tm³⁺-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy`
A11	`01`	`1`		`@1 PRESSEL (K.)`
A11	`02`	`1`		`@1 WEBER (J.)`
A11	`03`	`1`		`@1 HILLER (C.)`
A11	`04`	`1`		`@1 OTTENWÄLDER (D.)`
A11	`05`	`1`		`@1 KÜRNER (W.)`
A11	`06`	`1`		`@1 DÖRNEN (A.)`
A11	`07`	`1`		`@1 SCHOLZ (F.)`
A11	`08`	`1`		`@1 LOCKE (K.)`
A11	`09`	`1`		`@1 WIEDMANN (D.)`
A11	`10`	`1`		`@1 CORDEDDU (F.)`
A14	`01`			`@1 Univ. Stuttgart, IV. Physikalisches Inst. @2 7000 Stuttgart @3 DEU @Z 1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut., 7 aut.`
A20				`@1 560-562`
A21				`@1 1992`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 10020 @5 354000020348260210`
A44				`@0 0000`
A45				`@0 11 ref.`
A47	`01`	`1`		`@0 92-0499350`
A60				`@1 P`
A61				`@0 A`
A64		`1`		`@0 Applied physics letters`
A66	`01`			`@0 USA`
C01	`01`		`ENG`	@0 Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm³⁺-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm³⁺ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm³⁺-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature
C02	`01`	`X`		`@0 001B11H08`
C03	`01`	`X`	`FRE`	`@0 Etude expérimentale`
C03	`01`	`X`	`ENG`	`@0 Experimental study`
C03	`01`	`X`	`GER`	`@0 Experimentelle Untersuchung`
C03	`01`	`X`	`SPA`	`@0 Estudio experimental`
C03	`02`	`X`	`FRE`	`@0 Photoluminescence`
C03	`02`	`X`	`ENG`	`@0 Photoluminescence`
C03	`02`	`X`	`SPA`	`@0 Fotoluminiscencia`
C03	`03`	`X`	`FRE`	`@0 Transition optique`
C03	`03`	`X`	`ENG`	`@0 Optical transition`
C03	`03`	`X`	`GER`	`@0 Optischer Uebergang`
C03	`03`	`X`	`SPA`	`@0 Transición óptica`
C03	`04`	`X`	`FRE`	`@0 Impureté`
C03	`04`	`X`	`ENG`	`@0 Impurity`
C03	`04`	`X`	`GER`	`@0 Begleitelement`
C03	`04`	`X`	`SPA`	`@0 Impureza`
C03	`05`	`X`	`FRE`	`@0 Semiconducteur`
C03	`05`	`X`	`ENG`	`@0 Semiconductor materials`
C03	`05`	`X`	`GER`	`@0 Halbleiter`
C03	`05`	`X`	`SPA`	`@0 Semiconductor(material)`
C03	`06`	`X`	`FRE`	`@0 Composé minéral`
C03	`06`	`X`	`ENG`	`@0 Inorganic compound`
C03	`06`	`X`	`SPA`	`@0 Compuesto inorgánico`
C03	`07`	`X`	`FRE`	`@0 Gallium Arséniure @2 NC @2 FX @2 NA`
C03	`07`	`X`	`ENG`	`@0 Gallium Arsenides @2 NC @2 FX @2 NA`
C03	`07`	`X`	`SPA`	`@0 Galio Arseniuro @2 NC @2 FX @2 NA`
C03	`08`	`X`	`FRE`	`@0 Indium Phosphure @2 NC @2 NA`
C03	`08`	`X`	`ENG`	`@0 Indium Phosphides @2 NC @2 NA`
C03	`08`	`X`	`SPA`	`@0 Indio Fosfuro @2 NC @2 NA`
C03	`09`	`X`	`FRE`	`@0 Gallium Phosphure @2 NC @2 FX @2 NA`
C03	`09`	`X`	`ENG`	`@0 Gallium Phosphides @2 NC @2 FX @2 NA`
C03	`09`	`X`	`SPA`	`@0 Galio Fosfuro @2 NC @2 FX @2 NA`
C03	`10`	`X`	`FRE`	`@0 Gallium Indium Phosphure Mixte @2 NC @2 FX @2 NA`
C03	`10`	`X`	`ENG`	`@0 Gallium Indium Phosphides Mixed @2 NC @2 FX @2 NA`
C03	`10`	`X`	`SPA`	`@0 Galio Indio Fosfuro Mixto @2 NC @2 FX @2 NA`
C03	`11`	`X`	`FRE`	`@0 Thulium @2 NC`
C03	`11`	`X`	`ENG`	`@0 Thulium @2 NC`
C03	`11`	`X`	`GER`	`@0 Thulium @2 NC`
C03	`11`	`X`	`SPA`	`@0 Tulio @2 NC`
N21				`@1 289`

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Le document en format XML

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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
<author><name sortKey="Pressel, K" sort="Pressel, K" uniqKey="Pressel K" first="K." last="Pressel">K. Pressel</name>
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<country>Allemagne</country>
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<author><name sortKey="Weber, J" sort="Weber, J" uniqKey="Weber J" first="J." last="Weber">J. Weber</name>
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<author><name sortKey="Ottenw Lder, D" sort="Ottenw Lder, D" uniqKey="Ottenw Lder D" first="D." last="Ottenw Lder">D. Ottenw Lder</name>
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<author><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name>
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<author><name sortKey="Scholz, F" sort="Scholz, F" uniqKey="Scholz F" first="F." last="Scholz">F. Scholz</name>
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<author><name sortKey="Locke, K" sort="Locke, K" uniqKey="Locke K" first="K." last="Locke">K. Locke</name>
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<author><name sortKey="Wiedmann, D" sort="Wiedmann, D" uniqKey="Wiedmann D" first="D." last="Wiedmann">D. Wiedmann</name>
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<author><name sortKey="Cordeddu, F" sort="Cordeddu, F" uniqKey="Cordeddu F" first="F." last="Cordeddu">F. Cordeddu</name>
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<series><title level="j" type="main">Applied physics letters</title>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term>
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<term>Gallium Indium Phosphides Mixed</term>
<term>Gallium Phosphides</term>
<term>Impurity</term>
<term>Indium Phosphides</term>
<term>Inorganic compound</term>
<term>Optical transition</term>
<term>Photoluminescence</term>
<term>Semiconductor materials</term>
<term>Thulium</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Photoluminescence</term>
<term>Transition optique</term>
<term>Impureté</term>
<term>Semiconducteur</term>
<term>Composé minéral</term>
<term>Gallium Arséniure</term>
<term>Indium Phosphure</term>
<term>Gallium Phosphure</term>
<term>Gallium Indium Phosphure Mixte</term>
<term>Thulium</term>
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<front><div type="abstract" xml:lang="en">Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm<sup>3+</sup>
-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature</div>
</front>
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<fA06><s2>5</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>Tm<sup>3+</sup>
-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>PRESSEL (K.)</s1>
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<fA14 i1="01"><s1>Univ. Stuttgart, IV. Physikalisches Inst.</s1>
<s2>7000 Stuttgart</s2>
<s3>DEU</s3>
<sZ>1 aut., 2 aut., 3 aut., 4 aut., 5 aut., 6 aut., 7 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm<sup>3+</sup>
-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature</s0>
</fC01>
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<fC03 i1="03" i2="X" l="FRE"><s0>Transition optique</s0>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Optical transition</s0>
</fC03>
<fC03 i1="03" i2="X" l="GER"><s0>Optischer Uebergang</s0>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Transición óptica</s0>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Impureté</s0>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Impurity</s0>
</fC03>
<fC03 i1="04" i2="X" l="GER"><s0>Begleitelement</s0>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Impureza</s0>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Semiconducteur</s0>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Semiconductor materials</s0>
</fC03>
<fC03 i1="05" i2="X" l="GER"><s0>Halbleiter</s0>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Semiconductor(material)</s0>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Composé minéral</s0>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Inorganic compound</s0>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Compuesto inorgánico</s0>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Galio Arseniuro</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Indium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Indium Phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Indio Fosfuro</s0>
<s2>NC</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Gallium Phosphure</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Gallium Phosphides</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Galio Fosfuro</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Phosphure Mixte</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Phosphides Mixed</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Galio Indio Fosfuro Mixto</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Thulium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Thulium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="11" i2="X" l="GER"><s0>Thulium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Tulio</s0>
<s2>NC</s2>
</fC03>
<fN21><s1>289</s1>
</fN21>
</pA>
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Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

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