ThuliumV1, Pascal, Checkpoint, bibRecord, 001937

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Identifieur interne : 001937 ( Pascal/Checkpoint ); précédent : 001936; suivant : 001938

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Auteurs : K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. Cordeddu

Source :

Applied physics letters [ 0003-6951 ] ; 1992.

RBID : Pascal:92-0499350

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Photoluminescence, Transition optique, Impureté, Semiconducteur, Composé minéral, Gallium Arséniure, Indium Phosphure, Gallium Phosphure, Gallium Indium Phosphure Mixte, Thulium.
Wicri :
- topic : Composé minéral.

English descriptors

KwdEn :
- Experimental study, Gallium Arsenides, Gallium Indium Phosphides Mixed, Gallium Phosphides, Impurity, Indium Phosphides, Inorganic compound, Optical transition, Photoluminescence, Semiconductor materials, Thulium.

Abstract

Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm³⁺-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm³⁺ 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm³⁺-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature

Affiliations:

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Le document en format XML

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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
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<author><name sortKey="Locke, K" sort="Locke, K" uniqKey="Locke K" first="K." last="Locke">K. Locke</name>
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-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy</title>
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<author><name sortKey="Ottenw Lder, D" sort="Ottenw Lder, D" uniqKey="Ottenw Lder D" first="D." last="Ottenw Lder">D. Ottenw Lder</name>
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<author><name sortKey="Kurner, W" sort="Kurner, W" uniqKey="Kurner W" first="W." last="Kürner">W. Kürner</name>
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<author><name sortKey="Dornen, A" sort="Dornen, A" uniqKey="Dornen A" first="A." last="Dörnen">A. Dörnen</name>
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<author><name sortKey="Scholz, F" sort="Scholz, F" uniqKey="Scholz F" first="F." last="Scholz">F. Scholz</name>
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<author><name sortKey="Cordeddu, F" sort="Cordeddu, F" uniqKey="Cordeddu F" first="F." last="Cordeddu">F. Cordeddu</name>
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<series><title level="j" type="main">Applied physics letters</title>
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<term>Gallium Arsenides</term>
<term>Gallium Indium Phosphides Mixed</term>
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<term>Impurity</term>
<term>Indium Phosphides</term>
<term>Inorganic compound</term>
<term>Optical transition</term>
<term>Photoluminescence</term>
<term>Semiconductor materials</term>
<term>Thulium</term>
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<term>Photoluminescence</term>
<term>Transition optique</term>
<term>Impureté</term>
<term>Semiconducteur</term>
<term>Composé minéral</term>
<term>Gallium Arséniure</term>
<term>Indium Phosphure</term>
<term>Gallium Phosphure</term>
<term>Gallium Indium Phosphure Mixte</term>
<term>Thulium</term>
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<front><div type="abstract" xml:lang="en">Layers of InP:Tm, GaAs:Tm, GaP:Tm, and GaInP:Tm have been grown by metal-organic vapor phase epitaxy at atmospheric pressure using tris(isopropylcyclopentadienyl)thulium as a liquid Tm source. Electrical measurements revealed no characteristic influence of Tm on the electrical properties of the semiconductor host. Tm<sup>3+</sup>
-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
-related luminescence at 1.2 μm is much stronger than in the GaAs samples and is still observable at room temperature</div>
</front>
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-related 4f emissions at 1.2 and 1.9 μm are observed both in GaAs and GaInP. In GaAs, the Tm<sup>3+</sup>
 4f luminescence at 1.2 μm consists of a series of very sharp lines. In GaInP samples, the Tm<sup>3+</sup>
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<s2>NC</s2>
<s2>NA</s2>
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<s2>NC</s2>
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<fC03 i1="09" i2="X" l="FRE"><s0>Gallium Phosphure</s0>
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<s2>NA</s2>
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<fC03 i1="09" i2="X" l="ENG"><s0>Gallium Phosphides</s0>
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<fC03 i1="10" i2="X" l="FRE"><s0>Gallium Indium Phosphure Mixte</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
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<fC03 i1="10" i2="X" l="ENG"><s0>Gallium Indium Phosphides Mixed</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
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<fC03 i1="10" i2="X" l="SPA"><s0>Galio Indio Fosfuro Mixto</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
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<fC03 i1="11" i2="X" l="GER"><s0>Thulium</s0>
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<fC03 i1="11" i2="X" l="SPA"><s0>Tulio</s0>
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<affiliations><list><country><li>Allemagne</li>
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<tree><noCountry><name sortKey="Cordeddu, F" sort="Cordeddu, F" uniqKey="Cordeddu F" first="F." last="Cordeddu">F. Cordeddu</name>
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Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy

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English descriptors

Abstract

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