AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « État de New York »
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Émilie-Romagne < État de New York < État de Washington  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 335.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
001B55 (2012) Gallium Indium Nitride-Based Green Lasers
005136 (2009) Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide
005C34 (2008) The NANIVID : A New Device for Cancer Cell Migration Studies
006815 (2008) Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems
006992 (2008) Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation
00A376 (2004-06-28) Chemistry-mediated two-dimensional to three-dimensional transition of In thin films
00A391 (2004-06-15) Templated wide band-gap nanostructures
00A408 (2004-06-07) Terahertz emission by InN
00A425 (2004-06-01) Molecular simulation study of miscibility of ternary and quaternary InGaAlN alloys
00A445 (2004-05-31) GaInN light-emitting diodes with RuO2/SiO2/Ag omni-directional reflector
00A490 (2004-05-03) Organic light-emitting devices with laminated top contacts
00A555 (2004-04-26) Nonlinear optical input-output characteristics of 1.55 μm injection-locked vertical-cavity surface-emitting lasers
00A595 (2004-04-12) Effects of electron concentration on the optical absorption edge of InN
00A662 (2004-03-29) Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
00A674 (2004-03-22) Strain-compensated InGaAsSb/AlGaAsSb mid-infrared quantum-well lasers
00A728 (2004-03-01) Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy
00A729 (2004-03-01) High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications
00A755 (2004-03) Integrated InGaAs-InP quantum wire laser-modulators for 1.55-μm applications
00A882 (2004-01-12) High-efficiency tandem organic light-emitting diodes
00A973 (2004) Ultrafast carrier dynamics in InN epilayers
00BD22 (2003-12-15) Time-resolved spectroscopy of recombination and relaxation dynamics in InN

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