Écosse < Émilie-Romagne < État de New York

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]

Ident.	Authors (with country if any)	Title
001508 (2012)		Structural and local electrical properties of AlInN/AlN/GaN heterostructures
001782 (2012)		On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy
002F86 (2011)		Electrosynthesis and characterization of a conductive polythiophene deriving from a terthiophene monomer
004353 (2010)		Effects of different additives on bimetallic Au-Pt nanoparticles electrodeposited onto indium tin oxide electrodes
005E55 (2008)		Self-assembled gold nanoparticles modified ITO electrodes : The monolayer binder molecule effect
007A50 (2007)		Electrosynthesis of valuable conducting polymers from the anodic coupling of β-substituted oligothiophenes
007A97 (2007)		Electrochemical synthesis and characterization of poly [3 -(ω -bromoalkyl )thiophene]s
00AF76 (2004)		Organocatalyzed solvent-free aza-Henry reaction: A breakthrough in the one-pot synthesis of 1,2-diamines
00BD76 (2003-12-01)		Atomic environment of Fe following high-temperature implantation in InP
00C071 (2003-08-15)		Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys
00D633 (2003)		Electrochemical synthesis and spectroscopic studies of polyalkylthiophene bearing NLO chromophoric units
00D883 (2003)		Comparison of different porous sol-gel matrices: template synthesis of polythiophene
00DB55 (2003)		3-bromopropenyl esters in organic synthesis: Indium- and zinc-mediated entries to alk-1-ene-3,4-diols
00E992 (2002)		Strain effect on interatomic distances in InGaAs/InP epitaxial layers
00EA61 (2002)		Sequential one-pot InBr3-Catalyzed 1,4- then 1,2-nucleophilic addition to enones
00F382 (2002)		Failure modes and mechanisms of DC-aged GaN LEDs
00F637 (2002)		Determination of traces of iron in indium phosphide by electrothermal atomic absorption spectrometry combined with solvent extraction
010366 (2001-03-15)		Lattice distortion in InxGa1-xAs/InP epitaxial films: A second- and third-shell XAFS study
010E02 (2001)		Mid-infrared (3.5 μm) electroluminescence from heavily Fe2+ ion-implanted semi-insulating InP
011197 (2001)		High Fe2+/3+ trap concentration in heavily compensated implanted InP
011571 (2001)		Deep-level electroluminescence at 3.5 μm from semi-insulating InP layers ion implanted with Fe

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