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List of bibliographic references

Number of relevant bibliographic references: 36.
[20-40] [0 - 20][0 - 36]
Ident.Authors (with country if any)Title
015952 (1998-11-23) Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb
015A78 (1998-10-15) Optical properties of InxGa1-xN alloys grown by metalorganic chemical vapor deposition
015B97 (1998-09-07) S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
015C43 (1998-08-24) Observation of excitonic transitions in InSb quantum wells
015C44 (1998-08-24) Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
015C95 (1998-08-03) Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
015D79 (1998-07-01) Effect of substrate temperature on Si compensation in δ-doped InSb and AlxIn1-xSb grown by molecular beam epitaxy
016017 (1998-05) Electrical properties of InSb quantum wells remotely doped with Si
016113 (1998-03-30) High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells
017763 (1997-12-22) Visible electroluminescence from Eu:CaF2 layers grown by molecular beam epitaxy on p-Si (100)
017921 (1997-10-27) Pressure-dependent photoluminescence study of InxGa1-xN
018074 (1997-02-15) Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers
019713 (1996-11-25) Optical transitions in InxGa1-xN alloys grown by metalorganic chemical vapor deposition
019D33 (1996-05) Molecular-beam epitaxial growth and characterization of AlxIn1-xSb/InSb quantum well structures
019F19 (1996-03) Characterization of oxide desorption from InSb(001) substrates
01DA42 (1994-03) Structural and optical characterizations of InAsP/InP strained multiple quantum wells grown on InP (111)B substrates

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