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List of bibliographic references

Number of relevant bibliographic references: 36.
Ident.Authors (with country if any)Title
00A378 (2004-06-28) Ballistic transport in InSb/InAlSb antidot lattices
00A686 (2004-03-15) Spin-filter devices based on resonant tunneling antisymmetrical magnetic/semiconductor hybrid structures
00C107 (2003-08-04) InGaAs/GaAs three-dimensionally-ordered array of quantum dots
00E181 (2002-05-27) Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
00E396 (2002-03-25) Mobility anisotropy in InSb/AlxIn1-xSb single quantum wells
00E452 (2002-03-01) Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition
00FB07 (2001-12-15) Time-resolved photoluminescence of InxGa1-xN/GaN multiple quantum well structures: Effect of Si doping in the barriers
010160 (2001-05-15) Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an InxGa1-xN/GaN double heterostructure
010353 (2001-03-15) Temperature dependence of exciton linewidths in InSb quantum wells
011F06 (2000-06-26) Band offset determination in the strained-layer InSb/AlxIn1-xSb system
011F54 (2000-06-05) Room-temperature far-infrared emission from a self-organized InGaAs/GaAs quantum-dot laser
012095 (2000-05) Improving the surface morphology of InSb quantum-well structures on GaAs substrates
012268 (2000-03-15) Linear and nonlinear optical properties of InxGa1-xN/GaN heterostructures
013160 (2000) Growth of InGaN and GaN films by photo-assisted metalorganic chemical vapor deposition
013A49 (1999-10-25) Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions
013A96 (1999-10-11) Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
014026 (1999-05) Study of factors limiting electron mobility in InSb quantum wells
014273 (1999-03-01) High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration
015852 (1998-12-21) Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence
015942 (1998-11-30) Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells
015952 (1998-11-23) Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb
015A78 (1998-10-15) Optical properties of InxGa1-xN alloys grown by metalorganic chemical vapor deposition
015B97 (1998-09-07) S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
015C43 (1998-08-24) Observation of excitonic transitions in InSb quantum wells
015C44 (1998-08-24) Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells
015C95 (1998-08-03) Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells
015D79 (1998-07-01) Effect of substrate temperature on Si compensation in δ-doped InSb and AlxIn1-xSb grown by molecular beam epitaxy
016017 (1998-05) Electrical properties of InSb quantum wells remotely doped with Si
016113 (1998-03-30) High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells
017763 (1997-12-22) Visible electroluminescence from Eu:CaF2 layers grown by molecular beam epitaxy on p-Si (100)
017921 (1997-10-27) Pressure-dependent photoluminescence study of InxGa1-xN
018074 (1997-02-15) Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers
019713 (1996-11-25) Optical transitions in InxGa1-xN alloys grown by metalorganic chemical vapor deposition
019D33 (1996-05) Molecular-beam epitaxial growth and characterization of AlxIn1-xSb/InSb quantum well structures
019F19 (1996-03) Characterization of oxide desorption from InSb(001) substrates
01DA42 (1994-03) Structural and optical characterizations of InAsP/InP strained multiple quantum wells grown on InP (111)B substrates

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