Serveur d'exploration sur l'Indium - Repository (Accueil)

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Oblys d'Almaty < Ohio < Oklahoma  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 246.
[0-50] [0 - 20][0 - 50][50-70]
Ident.Authors (with country if any)Title
001148 (2013) Analysis of ITO cleaning protocol on surface properties and polymer: Fullerene bulk heterojunction solar cell performance
002161 (2011) Vertical Transport in InAs/GaSb Superlattices: Model Results and Relation to In-Plane Transport
002B66 (2011) Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition
003053 (2011) Electrical and Optical Characterization of Melt-Grown Bulk InAs1-yPy Crystals
003606 (2010) Type-II Superlattice Materials Research at the Air Force Research Laboratory
003757 (2010) THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
003833 (2010) Study of strain balance in long wavelength infrared InAs/GaSb superlattice materials
003931 (2010) Single-walled carbon nanotube growth from liquid gallium and indium
003947 (2010) Shape Changes in Patterned Planar InAs as a Function of Thickness and Temperature
003D06 (2010) MidIR and LWIR polarimetric sensor comparison study
003D84 (2010) Linewidth Enhancement Factor and Dynamical Response of an Injection-Locked Quantum-Dot Fabry-Perot Laser at 1310nm
004559 (2010) Composition and strain mapping of interfaces in InAs/GaSb superlattices by aberration-corrected high-resolution transmission electron microscopy
004E43 (2009) Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors
005799 (2009) Control of residual background carriers in undoped mid-infrared InAs/GaSb superlattices
006992 (2008) Discrimination between electronic and optical blooming in an InSb focal-plane array under high-intensity excitation
007314 (2007) Photoluminescence study of self-assembly of heterojunction quantum dots(hequads)
007453 (2007) Non-Geiger-mode single photon counting APDs with high detection probability & afterpulse-free performance
007925 (2007) Gross slip fretting wear of CrCn, TiAlN, Ni, and CuNiIn coatings on Ti6A4V interfaces
007C20 (2007) Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array
007F12 (2007) Analysis and optimization of thin film photovoltaic materials and device fabrication by real time spectroscopic ellipsometry
008435 (2006) Short period superlattices : is thinner better?
008451 (2006) Self-assembly of heterojunction quantum dots(HeQuaDs)
008531 (2006) Pushing the envelope to the maximum : Short-period InAs/GaSb type-II superlattices for mid-infrared detectors
008B38 (2006) Growth of short-period InAs/GaSb superlattices for mid-infrared photodetectors
009272 (2005) Type-II InAs/GaInSb superlattices for infrared detection : an overview
009589 (2005) SHG experiments in GaSe crystals at high rep rates
009A82 (2005) Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors
009B07 (2005) Influence of native defects on the infrared transmission of undoped Ga1-xInxSb bulk crystals
009B60 (2005) InAs/GaSb type-II superlattices for high performance mid-infrared detectors
009F22 (2005) Effects of the electric field poling procedure on electro-optic coefficient for guest-host nonlinear optic polymers
00A289 (2005) Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit
00A371 (2004-06-28) Optimization of mid-infrared InAs/GaSb type-II superlattices
00A378 (2004-06-28) Ballistic transport in InSb/InAlSb antidot lattices
00A493 (2004-05-03) Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
00A554 (2004-04-26) Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress
00A671 (2004-03-29) Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
00A677 (2004-03-22) High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition
00A714 (2004-03-08) Tunable and white light-emitting diodes of monolayer fluorinated benzoxazole graft copolymers
00A771 (2004-03) Atomic layer diffusion and electronic structure at In0.53Ga0.47As/InP interfaces
00A915 (2004-01) Electron beam prebunching in planar cold cathodes with surface current carrying thin films
00B392 (2004) InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications
00B668 (2004) Fabrication of indium bumps for hybrid infrared focal plane array applications
00B694 (2004) Exploring optimum growth for high quality InAs/GaSb type-II superlattices
00BF36 (2003-10-01) High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
00C157 (2003-07-21) Erratum: High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy [Appl. Phys. Lett. 82, 3212 (2003)]
00C397 (2003-05-12) High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy
00C430 (2003-05) Photosensitive Structures Based on CdGa2Se4 Single Crystals
00C521 (2003-04) In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy
00C547 (2003-03-17) Surface charge accumulation of InN films grown by molecular-beam epitaxy
00C599 (2003-03-01) Elastic and piezoelectric fields in a substrate AlN due to a buried quantum dot
00C677 (2003-02) Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals

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