Nottinghamshire < Nouveau-Mexique < Oblys d'Almaty

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List of bibliographic references

Number of relevant bibliographic references: 310.
[0-50] [0 - 20][0 - 50][50-70]

Ident.	Authors (with country if any)	Title
001407 (2012)		Taming transport in InN : Indium Nitride and Related Alloys
001A53 (2012)		I-V and Differential Conduction Characteristics of an AIGaAs/GaAs Lateral Quantum Dot Infrared Photodetector
002804 (2011)		Passive SWIR airglow illuminated imaging compared with NIR- visible for low light night time observations
002E41 (2011)		Gamma-ray Irradiation Effects on InAs/GaSb-based nBn IR Detector
003492 (2011)		A novel indium-111-labeled gonadotropin-releasing hormone peptide for human prostate cancer imaging
004324 (2010)		Electrical and Optical Characterization of InAs/GaSb-based nBn IR Detector
005A64 (2009)		1024 x 1024 Format pixel co-located simultaneously readable dual-band QWIP focal plane
005B56 (2008)		Toward very large format infrared detector arrays
006A19 (2008)		Development of Megapixel Dual-band QWIP Focal Plane Array
006E29 (2007)		Towards 16 Megapixel Focal Plane Arrays
007C20 (2007)		Dual spectral InGaAs/InP quantum-well infrared photodetector focal plane array
007D48 (2007)		Conduction studies on chemical bath-deposited nanocrystalline CdS thin films
008552 (2006)		Pressure effect on heavy fermion compound YbCu5
008651 (2006)		Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes
009666 (2005)		Progress in crystalline multijunction and thin-film photovoltaics
009C67 (2005)		High performance type II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays
00A430 (2004-06-01)		Crystalline electric field excitations in the heavy fermion superconductor CeCoIn5
00A432 (2004-06-01)		Anomalous nonlinear photoresponse in a InGaN/GaN heterostructure
00A479 (2004-05-10)		InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
00A509 (2004-05-01)		Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
00A605 (2004-04-05)		Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser
00A680 (2004-03-22)		2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
00A774 (2004-02-23)		Development of high-operating-temperature infrared detectors with gold-doped Hg0.70Cd0.30Te
00A782 (2004-02-16)		Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers
00A829 (2004-02-01)		Broadband Terahertz Radiation Emitter Using Femtosecond-Laser-Irradiated n-Type InAs under Magnetic Field
00A844 (2004-01-26)		Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)
00A901 (2004-01-01)		Carrier thermalization, cooling and diffusion in InSb through a nonlinear pump-probe technique
00A906 (2004-01)		Spectrally adaptive infrared photodetectors with bias-tunable quantum dots
00B559 (2004)		HgCdTe/Si materials for long wavelength infrared detectors
00BE24 (2003-11-15)		Erratum: Carrier migration in structures with InAs quantum dots [J. Appl. Phys. 94, 2454 (2003)]
00BF21 (2003-10-06)		Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector
00BF33 (2003-10-01)		Influence of band folding in InAs/GaSb superlattices
00C084 (2003-08-15)		Carrier migration in structures with InAs quantum dots
00C121 (2003-08-01)		InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
00C294 (2003-06-09)		Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors
00C308 (2003-06-01)		Magnetic ordering in the pressure-stabilized high-temperature phase of YbInCu4
00C410 (2003-05-01)		The red σ2/kT spectral shift in partially disordered semiconductors
00C455 (2003-04-21)		Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
00C549 (2003-03-17)		Parametric study of Ga1-xInxNyAs1-y/GaAs quantum wells for 1.3-μm laser operation
00C551 (2003-03-17)		Growth of room-temperature arsenic free infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers
00C565 (2003-03-15)		Formation trends in quantum dot growth using metalorganic chemical vapor deposition
00C573 (2003-03-15)		2.5-3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers
00C579 (2003-03-10)		Effect of tensile strain/well-width combination on the measured gain-radiative current characteristics of 635 nm laser diodes
00C606 (2003-03)		Inductively coupled plasma reactive ion etching of GaInAsSb and AlGaAsSb for quaternary antimonide multiple interconnected module thermophotovoltaics
00C689 (2003-01-27)		Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells
00C693 (2003-01-27)		Crystallographic dependence of the lateral undercut wet etching rate of InGaP in HCl
00C734 (2003-01-15)		Estimating the band discontinuity at GaInSb/GaSb heterojunction by investigation of single-quantum well photoluminescence
00C759 (2003-01-01)		Nonlocality and strong coupling in the heavy fermion superconductor CeCoIn5: A penetration depth study
00C760 (2003-01-01)		Magnetism and superconductivity in Ce2RhIn8
00DC38 (2002-12-01)		Critical magnetic-fluctuations-induced superconductivity and residual density of states in the CeRhIn5 superconductor
00DC65 (2002-11-15)		Theory of the copper vacancy in cuprous oxide

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