Nottinghamshire < Nouveau-Mexique < Oblys d'Almaty

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List of bibliographic references

Number of relevant bibliographic references: 310.
[20-40] [0 - 20][0 - 50][40-60]

Ident.	Authors (with country if any)	Title
00A605 (2004-04-05)		Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser
00A680 (2004-03-22)		2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
00A774 (2004-02-23)		Development of high-operating-temperature infrared detectors with gold-doped Hg0.70Cd0.30Te
00A782 (2004-02-16)		Comparison of the carrier induced refractive index, gain, and linewidth enhancement factor in quantum dot and quantum well lasers
00A829 (2004-02-01)		Broadband Terahertz Radiation Emitter Using Femtosecond-Laser-Irradiated n-Type InAs under Magnetic Field
00A844 (2004-01-26)		Quantum dot/substrate interaction in InAs/In0.53Ga0.47As/InP(001)
00A901 (2004-01-01)		Carrier thermalization, cooling and diffusion in InSb through a nonlinear pump-probe technique
00A906 (2004-01)		Spectrally adaptive infrared photodetectors with bias-tunable quantum dots
00B559 (2004)		HgCdTe/Si materials for long wavelength infrared detectors
00BE24 (2003-11-15)		Erratum: Carrier migration in structures with InAs quantum dots [J. Appl. Phys. 94, 2454 (2003)]
00BF21 (2003-10-06)		Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector
00BF33 (2003-10-01)		Influence of band folding in InAs/GaSb superlattices
00C084 (2003-08-15)		Carrier migration in structures with InAs quantum dots
00C121 (2003-08-01)		InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
00C294 (2003-06-09)		Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors
00C308 (2003-06-01)		Magnetic ordering in the pressure-stabilized high-temperature phase of YbInCu4
00C410 (2003-05-01)		The red σ2/kT spectral shift in partially disordered semiconductors
00C455 (2003-04-21)		Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
00C549 (2003-03-17)		Parametric study of Ga1-xInxNyAs1-y/GaAs quantum wells for 1.3-μm laser operation
00C551 (2003-03-17)		Growth of room-temperature arsenic free infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers
00C565 (2003-03-15)		Formation trends in quantum dot growth using metalorganic chemical vapor deposition

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