List of bibliographic references
Number of relevant bibliographic references: 459.
[0-50] [
0 - 20][
0 - 50][
50-70]
| Ident. | Authors (with country if any) | Title |
|---|
| 000147 (2014) |
| Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells |
| 000191 (2014) |
| Backgating effect in III-V MESFET's: A physical model |
| 000853 (2013) |
| Nanowire-based field effect transistors for terahertz detection and imaging systems : TERAHERTZ NANOTECHNOLOGY |
| 000B04 (2013) |
| InAs/AISb quantum cascade lasers operating near 20 μm |
| 000F12 (2013) |
| Effect of GaN template thickness and morphology on AlxGa1-xN (0 |
| 001017 (2013) |
| Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes |
| 001084 (2013) |
| Ce2PdIng, Ce3PdIn11 and Ce5Pd2In19-members of homological series based on AuCu3- and PtHg2-type structural units |
| 001245 (2013) |
| (112) and (220)/(204)-oriented CuInSe2 thin films grown by co-evaporation under vacuum |
| 001281 (2012) |
| Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys |
| 001342 (2012) |
| Thermodynamic prediction and experimental verification of optimal conditions for the growth of CuGa0.3In0.7Se2 thin films using close spaced vapor transport technique |
| 001596 (2012) |
| Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors |
| 001917 (2012) |
| Kinetics Model of the Thermal Oxidation of Indium Powder |
| 001932 (2012) |
| Investigation of indium nitride for micro-nanotechnology |
| 001D95 (2012) |
| Effect of Indium Doping of γ-Alumina on the Stabilization of PtSn Alloyed Clusters Prepared by Surface Organostannic Chemistry |
| 001E07 (2012) |
| E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods |
| 001E67 (2012) |
| Defect and phase stability of solid solutions of Mg2X with an antifluorite structure: An ab initio study |
| 001E69 (2012) |
| Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain |
| 002359 (2011) |
| Terahertz Imaging with InP High-electron-mobility Transistors |
| 002458 (2011) |
| Study of polycrystalline bulk CuIn1-xGaxTe2 |
| 002561 (2011) |
| Simulation approach for studying the performances of original superstrate CIGS thin films solar cells |
| 002786 (2011) |
| Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode |
| 002920 (2011) |
| Noise performance analysis of MWIR InAs/GaSb superlattice pin photodiodes |
| 002931 (2011) |
| New insight into indium electrochemistry in a Tf2N-based room-temperature ionic liquid |
| 002A29 (2011) |
| MOVPE growth and characterization of po!ar, semipo!ar and nonpo!ar )nN on sapphire substrate : Growth of Group III Nitrides |
| 002E59 (2011) |
| Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides |
| 003022 (2011) |
| Electrochemistry and biosensing activity of cytochrome c immobilized in macroporous materials |
| 003408 (2011) |
| Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation |
| 003661 (2010) |
| Thermal conductance of the interfaces between the III-nitride materials and their substrates: Effects of intrinsic material properties and interface conditions |
| 003970 (2010) |
| Sb-based laser sources grown by molecular beam epitaxy on silicon substrates |
| 003A07 (2010) |
| Recent advances in the MOVPE growth of indium nitride |
| 003C73 (2010) |
| Multiple steady state current-voltage characteristics in drift-diffusion modelisation of N type and semi-insulating GaAs Gunn structures |
| 003C95 (2010) |
| Modelling of an InAs/GaSb/InSb short-period superlattice laser diode for mid-infrared emission by the k.p method |
| 003D52 (2010) |
| MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire |
| 003E99 (2010) |
| Influence of aluminum doping in CuInS2 prepared by spray pyrolysis on different substrates |
| 003F85 (2010) |
| Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes |
| 004262 (2010) |
| Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation |
| 004331 (2010) |
| Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT |
| 004389 (2010) |
| Effect of indium in trimetallic Pt/Al2O3SnIn-Cl naphtha-reforming catalysts |
| 004515 (2010) |
| Dark Current and noise measurements in InAs/GaSb Superlattice Detectors |
| 004889 (2009) |
| Transparent electrochemical capacitor based on electrodeposited MnO2 thin film electrodes and gel-type electrolyte |
| 004976 (2009) |
| The effect of hydrostatic pressure on the operation of quantum cascade lasers |
| 004E48 (2009) |
| Optical, structural investigations and band-gap bowing parameter of GaInN alloys |
| 004F02 (2009) |
| Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications |
| 005012 (2009) |
| Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties |
| 005045 (2009) |
| MOVPE growth of InN buffer layers on sapphire |
| 005050 (2009) |
| MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones |
| 005137 (2009) |
| Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy |
| 005208 (2009) |
| InN excitonic deformation potentials determined experimentally |
| 005349 (2009) |
| Growth of InN films and nanostructures by MOVPE |
| 005479 (2009) |
| Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure |
| 005645 (2009) |
| Effect of pressure on electrical properties of short period InAs/GaSb superlattice |
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