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Index « AffRegion.i » - entrée « Iowa »
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Indiana < Iowa < Jilin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 48.
[20-40] [0 - 20][0 - 48][40-47][40-60]
Ident.Authors (with country if any)Title
012472 (2000-01-15) Crystal-field spectrum and linewidths in the heavy-fermion system PrInAg2
012491 (2000-01-01) Muon spin relaxation and nonmagnetic Kondo state in PrInAg2
013D78 (1999-07-15) Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer
014272 (1999-03-01) Magnetic-field dependence of the low-temperature specific heat in PrInAg2: Support for a nonmagnetic heavy-fermion ground state
014313 (1999-02-22) Erratum: Theoretical performance of midinfrared broken-gap multilayer superlattice lasers [Appl. Phys. Lett. 70, 3212 (1997)]
014348 (1999-02-15) Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices
014529 (1999-01-11) Optimization of active regions in midinfrared lasers
016124 (1998-03-23) Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations
016372 (1998-01-12) Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells
017757 (1997-12-29) III-V interband 5.2 μm laser operating at 185 K
017C83 (1997-06-16) Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers
017D05 (1997-06-15) Highly nonlinear Zeeman splitting of excitons in semiconductor quantum wells
017D88 (1997-05-19) Effects of aquaregia treatment of indium-tin-oxide substrates on the behavior of double layered organic light-emitting diodes
018003 (1997-03-10) Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode
018008 (1997-03-03) Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
018066 (1997-02-15) Pressure dependence of band offsets in InAs/Ga1-xInxSb superlattices
019805 (1996-10-21) Possible Correlated-Electron Behavior from Quadrupolar Fluctuations in PrInAg2
019976 (1996-08-15) Reply to ′′Comment on ′Temperature limits on infrared detectivities of InAs/InxGa1-xSb superlattices and bulk Hg1-xCdxTe′ ′′ [J. Appl. Phys. 80, 2542 (1996)]
019E26 (1996-04-08) Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well
01A066 (1996-01-01) Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells
01B434 (1995-12-25) Symmetric light emitting devices from poly(p-di ethynylene phenylene) (p-di phenylene vinylene) derivatives

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