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List of bibliographic references

Number of relevant bibliographic references: 48.
Ident.Authors (with country if any)Title
007A08 (2007) Exciton fine structure splitting in InP quantum dots in GaInP : Optical coherence and collective phenomena in nanostructures
00A424 (2004-06-01) Neutron scattering study of TbPtIn intermetallic compound
00A594 (2004-04-12) Efficient electron spin detection with positively charged quantum dots
00BF24 (2003-10-06) Nonmagnetic semiconductor spin transistor
00C725 (2003-01-15) Optical and theoretical investigations of small InP quantum dots in GaxIn1-xP
00DC09 (2002-12-15) Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
00DE16 (2002-10-01) Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates
00DF81 (2002-08-01) Effects of La substitution on the superconducting state of CeCoIn5
00E024 (2002-07-15) Calculations of the electronic structure of strained InAs quantum dots in InP
00FC06 (2001-11-15) Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice
00FC24 (2001-11-12) Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots
00FD12 (2001-10-15) Electron-spin decoherence in bulk and quantum-well zinc-blende semiconductors
00FD41 (2001-10-01) Combinatorial fabrication and studies of intense efficient ultraviolet-violet organic light-emitting device arrays
010363 (2001-03-15) Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures
010518 (2001-01-15) Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots
010571 (2001-01-01) High-spatial-resolution semiconductor characterization using a microwave eddy current probe
011D06 (2000-08-28) Room-temperature electron spin relaxation in bulk InAs
012020 (2000-05-15) Comparison of linewidth enhancement factors in midinfrared active region materials
012294 (2000-03-06) Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots
012396 (2000-02-01) Viscoelastic behavior of 80In15Pb5Ag and 50Sn50Pb alloys: Experiment and modeling
012472 (2000-01-15) Crystal-field spectrum and linewidths in the heavy-fermion system PrInAg2
012491 (2000-01-01) Muon spin relaxation and nonmagnetic Kondo state in PrInAg2
013D78 (1999-07-15) Differential gain, differential index, and linewidth enhancement factor for a 4 μm superlattice laser active layer
014272 (1999-03-01) Magnetic-field dependence of the low-temperature specific heat in PrInAg2: Support for a nonmagnetic heavy-fermion ground state
014313 (1999-02-22) Erratum: Theoretical performance of midinfrared broken-gap multilayer superlattice lasers [Appl. Phys. Lett. 70, 3212 (1997)]
014348 (1999-02-15) Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices
014529 (1999-01-11) Optimization of active regions in midinfrared lasers
016124 (1998-03-23) Sensitivity of optimization of mid-infrared InAs/InGaSb laser active regions to temperature and composition variations
016372 (1998-01-12) Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells
017757 (1997-12-29) III-V interband 5.2 μm laser operating at 185 K
017C83 (1997-06-16) Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers
017D05 (1997-06-15) Highly nonlinear Zeeman splitting of excitons in semiconductor quantum wells
017D88 (1997-05-19) Effects of aquaregia treatment of indium-tin-oxide substrates on the behavior of double layered organic light-emitting diodes
018003 (1997-03-10) Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode
018008 (1997-03-03) Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion
018066 (1997-02-15) Pressure dependence of band offsets in InAs/Ga1-xInxSb superlattices
019805 (1996-10-21) Possible Correlated-Electron Behavior from Quadrupolar Fluctuations in PrInAg2
019976 (1996-08-15) Reply to ′′Comment on ′Temperature limits on infrared detectivities of InAs/InxGa1-xSb superlattices and bulk Hg1-xCdxTe′ ′′ [J. Appl. Phys. 80, 2542 (1996)]
019E26 (1996-04-08) Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well
01A066 (1996-01-01) Per-carrier nonlinear optical response of [111]-oriented piezoelectric InGaAs/GaAs multiple quantum wells
01B434 (1995-12-25) Symmetric light emitting devices from poly(p-di ethynylene phenylene) (p-di phenylene vinylene) derivatives
01B722 (1995-09-01) Ce5Ni6In11: An intermediate heavy-fermion system
01B781 (1995-08-14) In-well screening nonlinearities in piezoelectric multiple quantum wells
01B989 (1995-05-22) Polarization rotation modulator in a strained [110]-oriented multiple quantum well
01BD03 (1995-02-13) Carrier and screening dynamics in strained [111]-oriented multiple quantum wells
01D181 (1994-12-15) Nonlinear optical response, screening, and distribution of strain in piezoelectric multiple quantum wells
01D459 (1994-09-15) Conduction-band states and surface core excitons in InSb(110) and other III-V compounds
01D852 (1994-05-15) Magnetic behavior of (CuIn)1-xMn2xTe2

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