Idaho < Illinois < Indiana

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 363.
[0-50] [0 - 20][0 - 50][50-70]

Ident.	Authors (with country if any)	Title
00A406 (2004-06-07)		Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor
00A430 (2004-06-01)		Crystalline electric field excitations in the heavy fermion superconductor CeCoIn5
00A481 (2004-05-10)		A polymer blend approach to fabricating the hole transport layer for polymer light-emitting diodes
00A485 (2004-05-03)		Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers
00A490 (2004-05-03)		Organic light-emitting devices with laminated top contacts
00A561 (2004-04-19)		The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation
00A651 (2004-04)		Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
00A671 (2004-03-29)		Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
00A677 (2004-03-22)		High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition
00A679 (2004-03-22)		Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes
00A687 (2004-03-15)		Quantum-well-base heterojunction bipolar light-emitting transistor
00A809 (2004-02-02)		Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
00A887 (2004-01-05)		Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors
00A889 (2004-01-05)		Effect of acidic and basic surface dipoles on the depletion layer of indium tin oxide as measured by in-plane conductance
00A902 (2004-01)		Ultrasensitive, fast, thin-film differential scanning calorimeter
00BD58 (2003-12-08)		Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser
00BE01 (2003-11-17)		Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope
00BE78 (2003-11)		Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications
00BF17 (2003-10-13)		Growth of uniform InAs quantum dots on InGaAs surface structure modified superlattices on InP
00BF36 (2003-10-01)		High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
00C038 (2003-08-25)		Publishers Note: Surface morphology control of InAs nanostructures grown on InGaAs/InP [Appl. Phys. Lett. 82, 4555 (2003)]
00C052 (2003-08-18)		Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition
00C192 (2003-07-07)		Effects of electron correlation on the photocurrent in quantum dot infrared photodetectors
00C250 (2003-06-23)		Surface morphology control of InAs nanostructures grown on InGaAs/InP
00C266 (2003-06-16)		Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots
00C314 (2003-06-01)		Cd doping at the CuInSe2/CdS heterojunction
00C344 (2003-05-19)		Very high average power at room temperature from λ≃5.9-μm quantum-cascade lasers
00C347 (2003-05-19)		Simulation evidence for lateral excitation transfer in a self-assembled quantum-dot array
00C416 (2003-05-01)		Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength
00C419 (2003-05-01)		Compliant epitaxial growth of InxGa1-xAs and InxAl1-xAs on In0.25Ga0.75As pseudosubstrates
00C450 (2003-04-28)		Cu depletion at the CuInSe2 surface
00C571 (2003-03-15)		Absence of correlation between built-in electric dipole moment and quantum Stark effect in single InAs/GaAs self-assembled quantum dots
00C659 (2003-02-01)		Structure of the liquid-vapor interface of a dilute ternary alloy: Pb and In in Ga
00C759 (2003-01-01)		Nonlocality and strong coupling in the heavy fermion superconductor CeCoIn5: A penetration depth study
00C781 (2003-01)		Electronic Properties of InGaAs/GaAs Strained Coupled Quantum Dots Modeled by Eight-Band k p Theory
00DB95 (2002-12-15)		Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface
00DC01 (2002-12-15)		Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding
00DC09 (2002-12-15)		Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
00DC10 (2002-12-09)		Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser
00DC16 (2002-12-02)		Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules
00DC21 (2002-12-02)		High-average-power, high-duty-cycle (λ∼6 μm) quantum cascade lasers
00DC35 (2002-12-01)		Effect of group II impurity and group III native defect on disordering Cu-Pt type ordered structures in In0.5(AlxGa1-x)0.5P layers
00DC44 (2002-12)		Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films
00DC78 (2002-11-15)		Neutron scattering study of crystal fields in CeRhIn5
00DD02 (2002-11-11)		Real-time heat capacity measurement during thin-film deposition by scanning nanocalorimetry
00DD06 (2002-11-04)		Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
00DD10 (2002-11-04)		Accurate First-Principles Detailed-Balance Determination of Auger Recombination and Impact Ionization Rates in Semiconductors
00DD64 (2002-10-15)		Simulated self-assembly and optoelectronic properties of InAs/GaAs quantum dot arrays
00DE08 (2002-10-01)		Observation of the superconducting proximity effect in Nb/InAs and NbNx/InAs by Raman scattering
00DE09 (2002-10-01)		Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers
00DE16 (2002-10-01)		Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates

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