| Ident. | Authors (with country if any) | Title |
|---|
| 00A492 (2004-05-03) |
| Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films |
| 00A493 (2004-05-03) |
| Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates |
| 00A622 (2004-04-01) |
| High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition |
| 00A676 (2004-03-22) |
| High-mobility, sputtered films of indium oxide doped with molybdenum |
| 00A740 (2004-03-01) |
| Annealing-induced-type conversion of GaInNAs |
| 00A772 (2004-02-23) |
| Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot |
| 00A812 (2004-02-02) |
| GaInP2 overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition |
| 00BD06 (2003-12-29) |
| InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation |
| 00BD53 (2003-12-08) |
| Surface-layer band gap widening in Cu(In,Ga)Se2 thin films |
| 00BD59 (2003-12-08) |
| Cathodoluminescence of Cu(In,Ga)Se2 thin films used in high-efficiency solar cells |
| 00BE35 (2003-11-10) |
| High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides |
| 00BE36 (2003-11-10) |
| Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)] |
| 00BE59 (2003-11-01) |
| Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth |
| 00BF59 (2003-09-22) |
| An electrostatic barrier to trap filling in CuIn1-xGaxSe2 |
| 00BF97 (2003-09-08) |
| Doping of chalcopyrites by hydrogen |
| 00C044 (2003-08-25) |
| Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells |
| 00C111 (2003-08-04) |
| Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections |
| 00C114 (2003-08-01) |
| Temperature dependence of nonradiative recombination in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates |
| 00C140 (2003-07-28) |
| Trap-dominated minority-carrier recombination in GaInNAspn junctions |
| 00C210 (2003-07) |
| Theory of optical properties of 6.1 Å III-V superlattices: The role of the interfaces |
| 00C234 (2003-07) |
| Development of radio-frequency magnetron sputtered indium molybdenum oxide |
| 00C257 (2003-06-23) |
| Direct measurement of polarization resolved transition dipole moment in InGaAs/GaAs quantum dots |
| 00C275 (2003-06-15) |
| Measurement of built-in electrical potential in III-V solar cells by scanning Kelvin probe microscopy |
| 00C453 (2003-04-25) |
| Energy-Filtered Scanning Tunneling Microscopy using a Semiconductor Tip |
| 00C470 (2003-04-15) |
| Pseudopotential calculation of the excitonic fine structure of million-atom self-assembled In1-xGaxAs/GaAs quantum dots |
| 00C478 (2003-04-15) |
| Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN |
| 00C568 (2003-03-15) |
| Effects of oxygen contamination on diffusion length in p+-n GaInNAs solar cells |
| 00C599 (2003-03-01) |
| Elastic and piezoelectric fields in a substrate AlN due to a buried quantum dot |
| 00C629 (2003-02-15) |
| Theoretical and experimental investigation of electronic structure and relaxation of colloidal nanocrystalline indium phosphide quantum dots |
| 00C689 (2003-01-27) |
| Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells |
| 00C744 (2003-01-13) |
| Size-dependent Raman study of InP quantum dots |
| 00C753 (2003-01-06) |
| Direct evidence of a buried homojunction in Cu(In,Ga)Se2 solar cells |
| 00DC24 (2002-12-02) |
| Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys |
| 00DC78 (2002-11-15) |
| Neutron scattering study of crystal fields in CeRhIn5 |
| 00DD28 (2002-11) |
| Near-surface electronic defects and morphology of CuIn1-xGaxSe2 |
| 00DD75 (2002-10-15) |
| Fabrication and structural analysis of Al, Ga, and In nanocluster crystals |
| 00DE13 (2002-10-01) |
| Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP |
| 00DE28 (2002-09-30) |
| Direct measurement of electrical potentials in GaInP2 solar cells |
| 00DE49 (2002-09-15) |
| Lateral composition modulation in (InAs)n/(AlAs)m short-period superlattices investigated by high-resolution x-ray scattering |
| 00DE58 (2002-09-15) |
| Bimodal size distribution of self-assembled InxGa1-xAs quantum dots |
| 00DF64 (2002-08-05) |
| Microstructure of surface layers in Cu(In,Ga)Se2 thin films |
| 00DF93 (2002-07-29) |
| Piezoelectric Coefficients of Complex Semiconductor Alloys from First-Principles: The Case of G a1- xI nxN |
| 00E005 (2002-07-15) |
| Two-dimensional array of self-assembled AlInAs quantum wires |
| 00E086 (2002-07) |
| Formation of InAs/GaAs quantum dots by dewetting during cooling |
| 00E111 (2002-06-17) |
| Defect-related density of states in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates |
| 00E163 (2002-06-01) |
| Determination of the order parameter of CuPt-B ordered GaInP2 films by x-ray diffraction |
| 00E208 (2002-05-15) |
| Compositional intermixing at CdS/Cu(In,Ga)Se2 rough interface studied by x-ray fluorescence |
| 00E230 (2002-05-06) |
| Initiation and evolution of phase separation in heteroepitaxial InAlAs films |
| 00E290 (2002-04-29) |
| Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates |
| 00E295 (2002-04-29) |
| Band alignment between GaAs and partially ordered GaInP |
| 00E341 (2002-04-15) |
| Effects of interfacial atomic segregation and intermixing on the electronic properties of InAs/GaSb superlattices |
