AffRegion.i
Repository
Accueil
Racine
Repository
Accueil
Racine

Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Colorado »
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Champagne-Ardenne < Colorado < Communauté de Madrid  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 317.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
00A492 (2004-05-03) Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films
00A493 (2004-05-03) Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
00A622 (2004-04-01) High-mobility transparent conducting Mo-doped In2O3 thin films by pulsed laser deposition
00A676 (2004-03-22) High-mobility, sputtered films of indium oxide doped with molybdenum
00A740 (2004-03-01) Annealing-induced-type conversion of GaInNAs
00A772 (2004-02-23) Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot
00A812 (2004-02-02) GaInP2 overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition
00BD06 (2003-12-29) InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation
00BD53 (2003-12-08) Surface-layer band gap widening in Cu(In,Ga)Se2 thin films
00BD59 (2003-12-08) Cathodoluminescence of Cu(In,Ga)Se2 thin films used in high-efficiency solar cells
00BE35 (2003-11-10) High mobility oxides: Engineered structures to overcome intrinsic performance limitations of transparent conducting oxides
00BE36 (2003-11-10) Erratum: Auger recombination in low-band-gap n-type InGaAs [Appl. Phys. Lett. 79, 3272 (2001)]
00BE59 (2003-11-01) Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growth
00BF59 (2003-09-22) An electrostatic barrier to trap filling in CuIn1-xGaxSe2
00BF97 (2003-09-08) Doping of chalcopyrites by hydrogen
00C044 (2003-08-25) Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells
00C111 (2003-08-04) Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections
00C114 (2003-08-01) Temperature dependence of nonradiative recombination in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates
00C140 (2003-07-28) Trap-dominated minority-carrier recombination in GaInNAspn junctions
00C210 (2003-07) Theory of optical properties of 6.1 Å III-V superlattices: The role of the interfaces
00C234 (2003-07) Development of radio-frequency magnetron sputtered indium molybdenum oxide

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