AffRegion.i
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Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Caroline du Sud »
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Caroline du Nord < Caroline du Sud < Castille-La Manche  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
00A486 (2004-05-03) Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire
00A699 (2004-03-15) High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition
00BE47 (2003-11-03) Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping
00C253 (2003-06-23) Exciton and carrier motion in quaternary AlInGaN
00C423 (2003-05) Vacuum deposition of silver island films on chemically modified surfaces
00D562 (2003) Fabricating high-density microarrays for retinal recording
00E176 (2002-05-27) Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells
00E191 (2002-05-20) Luminescence mechanisms in quaternary AlxInyGa1-x-yN materials
00E412 (2002-03-15) Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate
00E543 (2002-02-11) Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
00FA92 (2001-12-24) Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
00FA96 (2001-12-17) Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
00FD83 (2001-09-17) Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors
00FF11 (2001-08-13) Pulsed atomic layer epitaxy of quaternary AlInGaN layers
010488 (2001-02-05) Band-edge luminescence in quaternary AllnGaN light-emitting diodes
011A08 (2000-12-04) High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells
011B43 (2000-10-23) Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
011B94 (2000-10-02) Optical bandgap formation in AlInGaN alloys
012347 (2000-02-28) Lattice and energy band engineering in AlInGaN/GaN heterostructures
012447 (2000-01-17) Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates
013A04 (1999-11-01) Piezoelectric doping in AlInGaN/GaN heterostructures

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