AffRegion.i
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Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « AffRegion.i » - entrée « Caroline du Nord »
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List of bibliographic references

Number of relevant bibliographic references: 109.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
001860 (2012) Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer
002379 (2011) THz Lasing Concepts Based Upon InAs/GaSb Broken-Gap Heterostructures
002597 (2011) Room-temperature 4.0-μm broadened optical pumping injection cavity lasers
002A21 (2011) Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
003140 (2011) Effect of chelator conjugation level and injection dose on tumor and organ uptake of 111In-labeled MORAb-009, an anti-mesothelin antibody
00A601 (2004-04-05) On the origin of spin loss in GaMnN/InGaN light-emitting diodes
00A811 (2004-02-02) Low temperature InP/Si wafer bonding
00A815 (2004-02-02) Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures
00A910 (2004-01) Multimode interference switch design with loose manufacturing tolerance
00C114 (2003-08-01) Temperature dependence of nonradiative recombination in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates
00C583 (2003-03-03) Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
00DD76 (2002-10-15) Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
00DE32 (2002-09-23) Pseudodielectric functions of InGaAs alloy films grown on InP
00DE53 (2002-09-15) Elastic analysis of an inhomogeneous quantum dot in multilayered semiconductors using a boundary element method
00DF98 (2002-07-29) Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes
00E008 (2002-07-15) Spin relaxation of conduction electrons in bulk III-V semiconductors
00E066 (2002-07-01) Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy
00E111 (2002-06-17) Defect-related density of states in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates
00E292 (2002-04-29) Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures
00E305 (2002-04-22) Designing a heterostructure for the quantum receiver
00E310 (2002-04-15) Transmission of longitudinal optical phonons through a barrier in uniaxial crystals

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