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List of bibliographic references

Number of relevant bibliographic references: 104.
[0-50] [0 - 20][0 - 50][50-70]
Ident.Authors (with country if any)Title
004137 (2010) Flat liquid crystal diffractive lenses with variable focus and magnification
00A477 (2004-05-10) Observation of nonequilibrium longitudinal optical phonons in InN and its implications
00A497 (2004-05-03) Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN
00A673 (2004-03-22) The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4)
00A675 (2004-03-22) Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure
00A758 (2004-03) Image placement issues for ITO-based step and flash imprint lithography templates
00A850 (2004-01-26) Determination of In concentration in pseudomorphic InxGa1-xN quantum wells based on convergent-beam electron diffraction
00A886 (2004-01-05) Localization versus field effects in single InGaN quantum wells
00BD14 (2003-12-22) Slip systems and misfit dislocations in InGaN epilayers
00BD32 (2003-12-15) Nitrogen-activated bowing of dilute InyGa1-yAs1-xNx based on photoreflectance studies
00C049 (2003-08-18) Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
00C054 (2003-08-18) Dual computational basis qubit in semiconductor heterostructures
00C113 (2003-08-04) Demonstration of finite-aperture tapered unstable resonator lasers
00C215 (2003-07) Semiconductor waveguide inversion in disordered narrow band-gap materials
00C229 (2003-07) Greens function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
00C231 (2003-07) Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system
00C564 (2003-03-15) Greens function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure
00C581 (2003-03-03) Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN
00DC15 (2002-12-02) Ultrafast ac Stark effect switching of the active photonic band gap from Bragg-periodic semiconductor quantum wells
00DD27 (2002-11) Photopatternable sol-gel for compound semiconductor processing
00DD30 (2002-11) Low energy electron microscopy study of In on Si(111)
00DD33 (2002-11) Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates
00DD42 (2002-11) Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates
00DE68 (2002-09-02) Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
00DF43 (2002-08-15) Defect states in red-emitting InxAl1-xAs quantum dots
00DF52 (2002-08-12) Response to Comment on Low Stokes shift in thick and homogeneous InGaN epilayers [Appl. Phys. Lett 81, 1353 (2002)]
00E003 (2002-07-22) Experimental studies of the electron-phonon interaction in InGaAs quantum wires
00E022 (2002-07-15) Electronic states of prototype supertetrahedral framework materials
00E116 (2002-06-15) Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography
00E219 (2002-05-13) Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers
00E243 (2002-05-01) Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
00E244 (2002-05) Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy
00E599 (2002-01-28) Low Stokes shift in thick and homogeneous InGaN epilayers
00E604 (2002-01-21) Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor
00FB53 (2001-12-03) Evidence for Intervalence Band Coherences in Semiconductor Quantum Wells via Coherently Coupled Optical Stark Shifts
00FC30 (2001-11-05) Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots
00FC84 (2001-10-22) Periodic composition modulations in InGaN epitaxial layers
00FD67 (2001-09-24) Tunneling carrier escape from InAs self-assembled quantum dots
00FE01 (2001-09-15) Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1-xAs/GaAs alloy quantum dots
00FE90 (2001-08-15) Influence of light holes on the heavy-hole excitonic optical Stark effect
00FF84 (2001-07-02) Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well
010022 (2001-07) GaAs-substrate-based long-wave active materials with type-II band alignments
010044 (2001-06-18) Large-signal coherent control of normal modes in quantum-well semiconductor microcavity
010185 (2001-05-14) Picosecond Raman scattering studies of nonequilibrium electron distributions and energy-loss rate in InxGa1-xAs1-yNy
010231 (2001-04-30) Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
011955 (2000-12-25) Optically pumped InGaN/GaN lasers with wet-etched facets
011962 (2000-12-18) Quantum Correlations in the Nonperturbative Regime of Semiconductor Microcavities
011995 (2000-12-15) Anisotropy of electronic wave functions in self-aligned InAs dots on GaAs(001) studied by magnetic-field-dependent photoluminescence spectroscopy
011C52 (2000-09-15) Neutron irradiation induced degradation of the collector-emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors
011C80 (2000-09-01) Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100-1550 nm range
011D26 (2000-08-15) Signatures of correlations in intensity-dependent excitonic absorption changes

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