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Index « AffRegion.i » - entrée « Arizona »
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Aragon (communauté autonome) < Arizona < Arkansas  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 104.
[20-40] [0 - 20][0 - 50][40-60]
Ident.Authors (with country if any)Title
00DD30 (2002-11) Low energy electron microscopy study of In on Si(111)
00DD33 (2002-11) Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates
00DD42 (2002-11) Characterization of and imprint results using indium tin oxide-based step and flash imprint lithography templates
00DE68 (2002-09-02) Large g-factor enhancement in high-mobility InAs/AlSb quantum wells
00DF43 (2002-08-15) Defect states in red-emitting InxAl1-xAs quantum dots
00DF52 (2002-08-12) Response to Comment on Low Stokes shift in thick and homogeneous InGaN epilayers [Appl. Phys. Lett 81, 1353 (2002)]
00E003 (2002-07-22) Experimental studies of the electron-phonon interaction in InGaAs quantum wires
00E022 (2002-07-15) Electronic states of prototype supertetrahedral framework materials
00E116 (2002-06-15) Study of charge distribution across interfaces in GaN/InGaN/GaN single quantum wells using electron holography
00E219 (2002-05-13) Microscopic correlation of redshifted luminescence and surface defects in thick InxGa1-xN layers
00E243 (2002-05-01) Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties
00E244 (2002-05) Trench-type InGaAs quantum-wire field effect transistor with negative differential conductance fabricated by hydrogen-assisted molecular beam epitaxy
00E599 (2002-01-28) Low Stokes shift in thick and homogeneous InGaN epilayers
00E604 (2002-01-21) Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor
00FB53 (2001-12-03) Evidence for Intervalence Band Coherences in Semiconductor Quantum Wells via Coherently Coupled Optical Stark Shifts
00FC30 (2001-11-05) Direct quantitative measurement of compositional enrichment and variations in InyGa1-yAs quantum dots
00FC84 (2001-10-22) Periodic composition modulations in InGaN epitaxial layers
00FD67 (2001-09-24) Tunneling carrier escape from InAs self-assembled quantum dots
00FE01 (2001-09-15) Electronic structure consequences of In/Ga composition variations in self-assembled InxGa1-xAs/GaAs alloy quantum dots
00FE90 (2001-08-15) Influence of light holes on the heavy-hole excitonic optical Stark effect
00FF84 (2001-07-02) Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well

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