Singapour < Slovaquie < Slovénie

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 111.
[0-50] [0 - 20][0 - 50][50-70]

Ident.	Authors (with country if any)	Title
000505 (2013)		Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties
000567 (2013)		Selective reduction of acetic acid to ethanol over novel Qi2In/Al2O3 catalyst
000632 (2013)		Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method
000D96 (2013)		Electrical characterization of the AIIIBV-N heterostructures by capacitance methods
001347 (2012)		Thermally Oxidized InAlN of Different Compositions for InAlN/GaN Heterostructure Field-Effect Transistors
002012 (2012)		Atmospheric pressure diffuse plasma in ambient air for ITO surface cleaning
002678 (2011)		Proposal of High-Electron Mobility Transistors With Strained InN Channel
002802 (2011)		Patterning of pyramidal recesses in (1 0 0)InP substrate
002A97 (2011)		Kinetics of intermetallic phase formation at the interface of Sn-Ag-Cu-X (X = Bi, In) solders with Cu substrate
003671 (2010)		Thermal Analysis of the Sn-Ag-Cu-In Solder Alloy
003855 (2010)		Structural stability of In2O3 films as sensor materials
003863 (2010)		Structural characterization of sputtered indium oxide films deposited at room temperature
003E16 (2010)		Irradiation-induced defects in InN and GaN studied with positron annihilation
003F46 (2010)		In-vacancies in Si-doped InN
004104 (2010)		GaAs/AlAs/InGaP heterostructure: a versatile material basis for cantilever designs
004500 (2010)		Dependence of Curie temperature on surface strain in InMnAs epitaxial structures
004930 (2009)		Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3 /InAlN/GaN heterostructures
004D26 (2009)		Properties of Mn-doped FINEMET
005039 (2009)		Magnetic and electronic properties of heavy fermion compound CeCu4In and valence fluctuating compound CeNi4In
005650 (2009)		Effect of indium on wettability of Sn-Ag-Cu solders. Experiment vs. modeling, Part I
005652 (2009)		Effect of indium on the microstructure of the interface between Sn3.13AgO.74CuIn solder and Cu substrate
005978 (2009)		AlGaAs/InGaP interfaces in structures prepared by MOVPE
006441 (2008)		Influence of thermal cycling on shear strength of Cu-Sn3.5AgIn-Cu joints with various content of indium
007013 (2007)		Study of radiation detectors based on semi-insulating GaAs and InP : Aspects of material and electrode technology
007162 (2007)		Role of the V-III ratio and growth rate in decomposition of In0.27Ga0.73P/GaP grown by MOVPE
007441 (2007)		Novel Hall sensors developed for magnetic field imaging systems
007713 (2007)		Influence of surface strain on the MOVPE growth of InGaP epitaxial layers
008378 (2006)		Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates
008472 (2006)		SIMS and SEM analysis of In1-x-yAlxGayP LED structure grown on InxGa1-xP graded buffer
008552 (2006)		Pressure effect on heavy fermion compound YbCu5
008945 (2006)		Investigation of graded InxGa1-xP buffer by Raman scattering method
008F38 (2006)		Conformai AZ5214-E resist déposition on patterned (100) InP substrates
009955 (2005)		Micromachining of mesa and pyramidal-shaped objects in (100) InP substrates
009F35 (2005)		Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering
009F95 (2005)		Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging
00A937 (2004)		Wet-etch bulk micromachining of (100) InP substrates
00A967 (2004)		Ultrathin polyelectrolyte multilayers: in situ ESR/UV-Vis-NIR spectroelectrochemical study of charge carriers formed under oxidation
00AA19 (2004)		Thin film voltammetric microsensor for heavy metal analysis
00B157 (2004)		Material properties of graded composition InxGa1-xP buffer layers grown on GaP by organometallic vapor phase epitaxy
00B287 (2004)		Investigation of compensation defect centres in semi-insulating InP crystals
00B417 (2004)		In-depth analysis of the interfaces in InGaP/GaAs heterosystems
00B874 (2004)		Edge-emitting laser including an InAs/GaAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity
00CB47 (2003)		Stimulated red emission from InAs monolayers embedded in the active region of AlxGa1-xAs barriers
00D922 (2003)		Characterization of indium-tin-oxide thin film microelectrodes for biomedical use
00DA09 (2003)		Anisotropy in transport properties of ordered strained InGaP
00E782 (2002)		Tip-surface interactions in atomic force microscopy: reactive vs. metallic surfaces
00E946 (2002)		Study of narrow InGaP/(In)GaAs quantum wells
00EC96 (2002)		Patterning of a micromechanical coplanar waveguide using a dry etching technique
00F150 (2002)		InAlN/(In)GaN high electron mobility transistors: some aspects of the quantum well heterostructure proposal
00F285 (2002)		Hall bar device processing on patterned substrates using optical lithography
00F344 (2002)		Frequency-domain EBIC method for mapping of noise and instability regions in semiconductor devices

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/AffPays.i -k "Slovaquie" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Repository/AffPays.i  \
                -Sk "Slovaquie" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Main/Repository/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    indexItem
   |index=    AffPays.i
   |clé=    Slovaquie
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024