Norvège < Nouvelle-Zélande < Népal

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List of bibliographic references

Number of relevant bibliographic references: 43.
[0-20] [0 - 20][0 - 43][20-40]

Ident.	Authors (with country if any)	Title
001151 (2013)		An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric
001186 (2013)		A transparent and flexible organic bistable memory device using parylene with embedded gold nanoparticles
001770 (2012)		Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy : Indium Nitride and Related Alloys
002918 (2011)		Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer
002923 (2011)		Nickel (II) tetraphenylporphyrin modified surfaces via electrografting of an aryldiazonium salt
003918 (2010)		Solution Synthesis of Monodisperse Indium Nanoparticles and Highly Faceted Indium Polyhedra
003D37 (2010)		Measuring hybridization in GaInAs/InP electron billiard arrays
003F74 (2010)		Identification of a Deep Acceptor Level in ZnO Due to Silver Doping
004A30 (2009)		Synthesis, characterization and photoconductivity of highly crystalline InP nanowires prepared from solid hydrogen phosphide
004C97 (2009)		Radicals in organic synthesis. Part 1
006B81 (2008)		Carrier density saturation in a Ga0.25In0.75As/InP heterostructure
007363 (2007)		Oxygen uptake of InN thin films as determined by ion beam analysis
007671 (2007)		Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films
008518 (2006)		RF plasma sources for III-nitrides growth : influence of operating conditions and device geometry on active species production and InN film properties
008712 (2006)		Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy
009328 (2005)		Thermal and electrical transport properties of Ag-In-Yb quasicrystals : An experimental study
009710 (2005)		Polarization sensitivity characterization under normal incidence of a multiple quantum wells saturable absorber nonlinear mirror as a function of the temperature of the chip
009793 (2005)		Organic light-emitting devices using ruthenium (II) (4,7-diphenyl-1,10-phenanthroline)3 as dopant
009F29 (2005)		Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition
00BA53 (2004)		Characteristics of InN thin films grown using a PAMBE technique
00BE17 (2003-11-15)		Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)3: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum

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