List of bibliographic references
Number of relevant bibliographic references: 43.
| Ident. | Authors (with country if any) | Title |
|---|
| 001151 (2013) |
| An optically transparent and flexible memory with embedded gold nanoparticles in a polymethylsilsesquioxane dielectric |
| 001186 (2013) |
| A transparent and flexible organic bistable memory device using parylene with embedded gold nanoparticles |
| 001770 (2012) |
| Optical and electrical characteristics of Mn-doped InN grown by plasma-assisted molecular beam epitaxy : Indium Nitride and Related Alloys |
| 002918 (2011) |
| Non-volatile memory with zinc oxide nanoparticles embedded in a hybrid polymethylsilsesquioxane layer |
| 002923 (2011) |
| Nickel (II) tetraphenylporphyrin modified surfaces via electrografting of an aryldiazonium salt |
| 003918 (2010) |
| Solution Synthesis of Monodisperse Indium Nanoparticles and Highly Faceted Indium Polyhedra |
| 003D37 (2010) |
| Measuring hybridization in GaInAs/InP electron billiard arrays |
| 003F74 (2010) |
| Identification of a Deep Acceptor Level in ZnO Due to Silver Doping |
| 004A30 (2009) |
| Synthesis, characterization and photoconductivity of highly crystalline InP nanowires prepared from solid hydrogen phosphide |
| 004C97 (2009) |
| Radicals in organic synthesis. Part 1 |
| 006B81 (2008) |
| Carrier density saturation in a Ga0.25In0.75As/InP heterostructure |
| 007363 (2007) |
| Oxygen uptake of InN thin films as determined by ion beam analysis |
| 007671 (2007) |
| Ion beam analysis of amorphous and nanocrystalline group III-V nitride and ZnO thin films |
| 008518 (2006) |
| RF plasma sources for III-nitrides growth : influence of operating conditions and device geometry on active species production and InN film properties |
| 008712 (2006) |
| Optical and compositional properties of indium nitride grown by plasma assisted molecular beam epitaxy |
| 009328 (2005) |
| Thermal and electrical transport properties of Ag-In-Yb quasicrystals : An experimental study |
| 009710 (2005) |
| Polarization sensitivity characterization under normal incidence of a multiple quantum wells saturable absorber nonlinear mirror as a function of the temperature of the chip |
| 009793 (2005) |
| Organic light-emitting devices using ruthenium (II) (4,7-diphenyl-1,10-phenanthroline)3 as dopant |
| 009F29 (2005) |
| Effects of introduction of argon on structural and transparent conducting properties of ZnO-In2O3 thin films prepared by pulsed laser deposition |
| 00BA53 (2004) |
| Characteristics of InN thin films grown using a PAMBE technique |
| 00BE17 (2003-11-15) |
| Light-emitting devices based on ruthenium(II)(4,7-diphenyl-1,10-phenanthroline)3: Device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum |
| 00CE60 (2003) |
| Organic light emitting devices based on exciplex interaction from blends of charge transport molecules |
| 00D118 (2003) |
| Light emitting devices from blended films of ruthenium(II)bis(2,2'-bipyridine) (4,7-dimethyl-1,10-phenanthroline) complex with poly(N-vinylcarbazole) |
| 00D628 (2003) |
| Electroluminescence from exciplex interaction between hole and electron transport molecules |
| 00F902 (2002) |
| Anomalous temperature-dependent behavior of photoluminescence in porous InP treated by H plasma |
| 010564 (2001-01-01) |
| Radiative recombination and filling effect of surface states in porous InP |
| 010804 (2001) |
| Temperature dependent photoluminescence of porous InP |
| 010B84 (2001) |
| Photoelectrochemical cells based on polymers and copolymers from terthiophene and nitrostyrylterthiophene |
| 010E06 (2001) |
| Microstructure and photoluminescence spectra of porous InP |
| 014732 (1999) |
| Thermoelectric power and conductivity of different types of polypyrrole |
| 015701 (1999) |
| An open-ended coaxial probe for broad-band permittivity measurement of agricultural products |
| 016912 (1998) |
| Radical processes in the pyrolysis of trialkyl compounds of group 13 CVD precursors |
| 016913 (1998) |
| Radical processes in the pyrolysis of trialkyl compounds of group 13 CVD precursors |
| 019A47 (1996-07-15) |
| The accuracy of the pseudopotential approximation. II. A comparison of various core sizes for indium pseudopotentials in calculations for spectroscopic constants of InH, InF, and InCl |
| 01BD10 (1995-02-01) |
| The accuracy of the pseudopotential approximation. I. An analysis of the spectroscopic constants for the electronic ground states of InCl and InCl3 using various three valence electron pseudopotentials for indium |
| 01F044 (1993) |
| The production of heavy multiply charged ions in secondary ion mass spectrometry |
| 020290 (1993) |
| Evidence on ligand strengths from the crystal structures of [InCl3(dmf)3], [InCl3(dma)3], [{InCl3(PhCHO)3}2].PhCHO and [InCl3(PhCOMe)2] from dimethylformamide (dmf), dimethylacetamide (dma), benzaldehyde and acetophenone |
| 023B26 (1990) |
| Structures of indium trihalide complexes with phosphine oxides and dimethyl sulphoxide, with comments on the metal-oxygen bonding |
| 025914 (1988) |
| The preparation and structure of tris[bis(pyrazolyl)borate]indium(III) |
| 025F53 (1988) |
| Indium(III) halide complexes with trimethylphosphine sulphide and trimethylarsine sulphide: structures and bonding of [InX3(Me3MS)2[ (X= Cl or Br, M= P or As) and [InCl3(H2O)(Me3AsS)2] |
| 026182 (1988) |
| Enhancement of low temperature thermopower in high-resistivity films |
| 027811 (1986) |
| The structure of an indium trichloride trimethyl-arsine oxide complex, 2InCl3•3Me3AsO |
| 027855 (1986) |
| The crystal structure and vibrational spectrum of (C8H20N2)[InBr5(H2O)]•H2O, a salt of the 1,1,4,4-tetramethylpiperazonium dication containing the aquopentabromoindate complex anion |
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